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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3

Applied physics letters, 2021-02, Vol.118 (8)

2021

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High temperature evolution of a confined silicon layer

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Distortions correction in HR-(S)TEM and low resolution TEM images: Absolute size, strain and polarization measurements

BIO web of conferences, 2024, Vol.129, p.4026

2024

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Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Journal of applied physics, 2019-04, Vol.125 (14)

2019

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Dynamic scattering theory for dark-field electron holography of 3D strain fields

Ultramicroscopy, 2014-01, Vol.136, p.42-49

2014

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Experimentally-Verified Modeling of InGaAs Quantum Dots

Nanomaterials (Basel, Switzerland), 2022-06, Vol.12 (12), p.1967

2022

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X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Nanomaterials (Basel, Switzerland), 2021-06, Vol.11 (7), p.1729

2021

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Application of special lubricating compositions to increase the efficiency of friction surface run-in

BIO Web of Conferences, 2022, Vol.52, p.31

2022

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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Electromechanically Coupled III-N Quantum Dots

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (2), p.241

2023

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Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (8), p.1367

2023

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Strain in Hydrogen-Implanted Si Investigated Using Dark-Field Electron Holography

Applied physics express, 2013-09, Vol.6 (9), p.91301

2013

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Sb-rich nanoinclusions in an AlGaAsSb metamaterial

MRS advances, 2019-01, Vol.4 (5-6), p.277-284

2019

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On the origin of dislocation loops in irradiated materials: A point of view from silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-05, Vol.374, p.82-89

2016

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Strain mapping in layers and devices by electron holography

Physica status solidi. A, Applications and materials science, 2011-03, Vol.208 (3), p.580-583

2011

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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Applied physics letters, 2021, Vol.118 (8)

2021

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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Journal of applied physics, 2018-04, Vol.123 (16), p.161556-161559

2018

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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

Ultramicroscopy, 2023-11, Vol.253, p.113778-113778, Article 113778

2023

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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Microelectronic engineering, 2018-04, Vol.190, p.54-56

2018

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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Journal of applied physics, 2016-04, Vol.119 (13), p.135308-245301

2016

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Electron microscopy by specimen design: application to strain measurements

Scientific reports, 2017-09, Vol.7 (1), p.12394-8, Article 12394

2017

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Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates

Optics express, 2018-05, Vol.26 (11), p.13985-13994

2018

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A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

Nanotechnology, 2018-09, Vol.29 (36), p.365304

2018

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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3

High temperature evolution of a confined silicon layer

Distortions correction in HR-(S)TEM and low resolution TEM images: Absolute size, strain and polarization measurements

Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Experimentally-Verified Modeling of InGaAs Quantum Dots

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Application of special lubricating compositions to increase the efficiency of friction surface run-in

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Electromechanically Coupled III-N Quantum Dots

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Strain in Hydrogen-Implanted Si Investigated Using Dark-Field Electron Holography

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Strain mapping in layers and devices by electron holography

Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Electron microscopy by specimen design: application to strain measurements

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates

A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

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