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Study of a Palladium (Pd)/Aluminum-Doped Zinc Oxide (AZO) Hydrogen Sensor and the Kalman Algorithm for Internet-of-Things (IoT) Application

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4405-4412

2020

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IEEE_Xplore

A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) Nanoparticles

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1176-1182

2020

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IEEE_Xplore

Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.296-303

2020

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IEEE_Xplore

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1134-1139

2017

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IEEE_Xplore

Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2542-2548

2017

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IEEE_Xplore

Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles

Sensors and actuators. B, Chemical, 2020-08, Vol.317, p.128145, Article 128145

2020

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Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Sensors and actuators. B, Chemical, 2021-03, Vol.331, p.129320, Article 129320

2021

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Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

Sensors and actuators. B, Chemical, 2021-03, Vol.330, p.129339, Article 129339

2021

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Room-Temperature Hydrogen- and Ammonia Gas-Sensing Characteristics of a GaN-Based Schottky Diode Synthesized With a Hybrid Surface Structure

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.761-768

2021

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IEEE_Xplore

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4953-4957

2020

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IEEE_Xplore

Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2901-2907

2006

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IEEE_Xplore

Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Solid-state electronics, 2012-06, Vol.72, p.22-28

2012

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Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

Physica status solidi. C, 2011-05, Vol.8 (5), p.1664-1668

2011

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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple [Formula Omitted]-Doped Sheets

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3310

2008

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Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2689-2695

2006

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IEEE_Xplore

On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

IEEE electron device letters, 2009-04, Vol.30 (4), p.325-327

2009

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IEEE_Xplore

Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.1-8

2006

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IEEE_Xplore

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple \delta-Doped Sheets

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3310-3313

2008

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IEEE_Xplore

Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Journal of applied physics, 2007-02, Vol.101 (3)

2007

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Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1938-1944

2001

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IEEE_Xplore

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

IEEE electron device letters, 2008-01, Vol.29 (1), p.11-14

2008

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IEEE_Xplore

Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2282-2289

2013

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Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

Solid-state electronics, 2014-09, Vol.99, p.21-24

2014

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Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

IEEE transactions on electron devices, 2002-10, Vol.49 (10), p.1687-1693

2002

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IEEE_Xplore

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

Progress in natural science, 2010-11, Vol.20 (1), p.70-75

2010

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Study of a Palladium (Pd)/Aluminum-Doped Zinc Oxide (AZO) Hydrogen Sensor and the Kalman Algorithm for Internet-of-Things (IoT) Application

A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) Nanoparticles

Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles

Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

Room-Temperature Hydrogen- and Ammonia Gas-Sensing Characteristics of a GaN-Based Schottky Diode Synthesized With a Hybrid Surface Structure

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple [Formula Omitted]-Doped Sheets

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple \delta-Doped Sheets

Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer

Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

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