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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

IEEE electron device letters, 2014-01, Vol.35 (1), p.138-140

2014

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Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

Advanced materials (Weinheim), 2011-02, Vol.23 (7), p.902-905

2011

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Effect of Plasma Fluorination in p-Type SnO TFTs: Experiments, Modeling, and Simulation

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1314-1321

2019

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Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancement

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3498-3501

2017

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Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

Journal of materials science, 2021-04, Vol.56 (10), p.6286-6291

2021

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Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices

Materials, 2023-04, Vol.16 (9), p.3306

2023

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Investigation of strain‐induced phase transformation in ferroelectric transistor using metal‐nitride gate electrode

Physica status solidi. PSS-RRL. Rapid research letters, 2017-03, Vol.11 (3), p.1600368-n/a

2017

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Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.825-828

2019

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Progress and challenges in p-type oxide-based thin film transistors

Nanotechnology reviews (Berlin), 2019-01, Vol.8 (1), p.422-443

2019

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Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Journal of alloys and compounds, 2017-06, Vol.707, p.162-166

2017

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Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.1082-1086

2019

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Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4200-4205

2017

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Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- \kappa Gate Dielectric

IEEE electron device letters, 2014-02, Vol.35 (2), p.274-276

2014

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Experimental Observation of Negative Capacitance Switching Behavior in One‐Transistor Ferroelectric Versatile Memory

Physica status solidi. PSS-RRL. Rapid research letters, 2017-10, Vol.11 (10), p.n/a

2017

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High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

IEEE electron device letters, 2014-01, Vol.35 (1), p.87-89

2014

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Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment

IEEE electron device letters, 2017-02, Vol.38 (2), p.210-212

2017

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Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics

Materials research express, 2024-04, Vol.11 (4), p.46404

2024

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Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Physica status solidi. PSS-RRL. Rapid research letters, 2019-05, Vol.13 (5), p.n/a

2019

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Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Physica status solidi. PSS-RRL. Rapid research letters, 2019-02, Vol.13 (2), p.n/a

2019

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A p‐Type Ferroelectric Field‐Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

Physica status solidi. PSS-RRL. Rapid research letters, 2020-12, Vol.14 (12), p.n/a

2020

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Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

IEEE transactions on nanotechnology, 2020, Vol.19, p.89-93

2020

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Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.948-958

2020

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Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

Journal of electronic materials, 2018, Vol.47 (1), p.677-683

2018

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Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.741-747

2021

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Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

IEEE transactions on nanotechnology, 2017-09, Vol.16 (5), p.876-879

2017

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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

Effect of Plasma Fluorination in p-Type SnO TFTs: Experiments, Modeling, and Simulation

Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancement

Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices

Investigation of strain‐induced phase transformation in ferroelectric transistor using metal‐nitride gate electrode

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Progress and challenges in p-type oxide-based thin film transistors

Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- \kappa Gate Dielectric

Experimental Observation of Negative Capacitance Switching Behavior in One‐Transistor Ferroelectric Versatile Memory

High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment

Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

A p‐Type Ferroelectric Field‐Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors

Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

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