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Surface Detection of Strain-Relaxed Si1-xGex Alloys With High Ge-Content by Optical Second-Harmonic Generation

IEEE journal of quantum electronics, 2015-12, Vol.51 (12), p.1-6

2015

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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

Chinese physics B, 2014-11, Vol.23 (11), p.116103-1-116103-4

2014

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High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

IEEE electron device letters, 2010-07, Vol.31 (7), p.701-703

2010

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High performance silicon waveguide germanium photodetector

Chinese physics B, 2015-03, Vol.24 (3), p.423-427

李冲薛春来李亚明李传波成步文王启明

2015

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Efficient evanescent coupling design for GeSi electro-absorption modulator

Chinese physics B, 2013-12, Vol.22 (12), p.293-296

李亚明成步文

2013

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Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Chinese physics B, 2013-11, Vol.22 (11), p.116804-1-116804-4

2013

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High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

Chinese physics B, 2013-11, Vol.22 (11), p.651-655

李冲薛春来李传波刘智成步文王启明

2013

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Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes

Chinese physics letters, 2012-03, Vol.29 (3), p.34205-1-034205-3

2012

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Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors

Chinese physics B, 2014-03, Vol.23 (3), p.640-644

李冲薛春来刘智成步文李传波王启明

2014

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Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Chinese physics letters, 2013-11, Vol.30 (11), p.118501-1-118501-4

2013

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Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

Chinese physics B, 2011-10, Vol.20 (10), p.345-348

2011

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Chinese physics B, 2015-05, Vol.24 (5), p.587-591

侍铭陈平赵德刚江德生郑军成步文朱建军刘宗顺刘炜李翔赵丹梅王启明刘建平张书明杨辉

2015

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Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators

Chinese physics letters, 2011, Vol.28 (1), p.102-105

2011

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High-Performance Germanium Waveguide Photodetectors on Silicon

Chinese physics letters, 2020-03, Vol.37 (3), p.38503

2020

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Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Chinese physics B, 2022-04, Vol.31 (4), p.717-720

2022

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GeSi modulator based on two-mode interference

Applied optics (2004), 2014-01, Vol.53 (2), p.221

2014

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Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

Chinese physics B, 2011-12, Vol.20 (12), p.126801-1-126801-7

2011

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Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature

Chinese physics B, 2011-11, Vol.20 (11), p.391-396

白安琪郑军陶冶了左玉华薛春来成步文王启明

2011

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Strained and strain-relaxed epitaxial Ge1−xSnx alloys on Si(100) substrates

Chinese physics B, 2011-06, Vol.20 (6), p.068103-jQuery1323923684614='49'

2011

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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Chinese physics B, 2012, Vol.21 (1), p.493-498

胡炜玄成步文薛春来张广泽苏少坚左玉华王启明

2012

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High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Chinese physics B, 2019-06, Vol.28 (6), p.64208

2019

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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

Chinese physics B, 2011, Vol.20 (1), p.684-688

左玉华曹权张云张岭梓郭剑川薛春来成步文王启明

2011

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Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Chinese physics B, 2016-12, Vol.25 (12), p.357-360

何超刘智成步文

2016

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Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing

Chinese physics letters, 2008-01, Vol.25 (1), p.242-245

2008

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Surface Detection of Strain-Relaxed Si1-xGex Alloys With High Ge-Content by Optical Second-Harmonic Generation

Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

High performance silicon waveguide germanium photodetector

Efficient evanescent coupling design for GeSi electro-absorption modulator

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors

Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators

High-Performance Germanium Waveguide Photodetectors on Silicon

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

GeSi modulator based on two-mode interference

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature

Strained and strain-relaxed epitaxial Ge1−xSnx alloys on Si(100) substrates

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing

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