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Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor

Journal of nanoscience and nanotechnology, 2015-08, Vol.15 (8), p.5706

2015

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Fabrication and Characterization of InGaAs Zero Bias SBD and Detector with T-gate Anode

2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2020, p.1-3

2020

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220GHz on-wafer measurement based on TRL calibration method

2015 12th IEEE International Conference on Electronic Measurement & Instruments (ICEMI), 2015, Vol.2, p.868-871

2015

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A new on-wafer multiline thru-reflect-line (TRL) calibration standard design

Proceedings of 2014 3rd Asia-Pacific Conference on Antennas and Propagation, 2014, p.934-936

2014

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On-wafer deembeedding techniques with application to HEMT devices characterization

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, p.1-3

2014

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Modeling techniques for graphene field-effect transistors

2015 IEEE International Conference on Communication Problem-Solving (ICCP), 2015, p.373-376

2015

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Heterogenous Integration of InP DHBT and Si CMOS by 30\mu\mathrm Pitch Au-In Microbumps

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, p.1-3

2021

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L-Band 1000W Single-Chip Internally Matched GaN Amplifier

2019 IEEE MTT-S International Wireless Symposium (IWS), 2019, p.1-3

2019

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020, p.1-4

2020

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Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor

Fabrication and Characterization of InGaAs Zero Bias SBD and Detector with T-gate Anode

220GHz on-wafer measurement based on TRL calibration method

A new on-wafer multiline thru-reflect-line (TRL) calibration standard design

On-wafer deembeedding techniques with application to HEMT devices characterization

Modeling techniques for graphene field-effect transistors

Heterogenous Integration of InP DHBT and Si CMOS by 30\mu\mathrm Pitch Au-In Microbumps

L-Band 1000W Single-Chip Internally Matched GaN Amplifier

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

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