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A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.65-68

2024

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A 0.02mm2Sub-Sampling PLL with Spur Reduction Technique in 90nm CMOS Technology

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-4

2023

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A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447

2019

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A 0.13 [Formula Omitted]m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1454-1463

2009

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A 0.13 \mu m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1454-1463

2009

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La 0.14 V 2 O 5 /Reduced Graphene Oxide Composite for Aqueous Zinc−Ion Batteries with Long Cycle Life

Journal of the Electrochemical Society, 2021-08, Vol.168 (8), p.80527

2021

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0.18 dB Low-noise Figure at 10 GHz for GaN MIS-HEMT with Plasma-enhanced Atomic Layer Deposition SiN Layer

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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A 0.18 [Formula Omitted]m CMOS Quadrature VCO Using the Quadruple Push-Push Technique

IEEE microwave and wireless technology letters (Print), 2010-06, Vol.20 (6), p.343

2010

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A 0.18 \mu m CMOS Quadrature VCO Using the Quadruple Push-Push Technique

IEEE microwave and wireless components letters, 2010-06, Vol.20 (6), p.343-345

2010

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A 0.18.MU.m CMOS Wide-Band Injection-Locked Frequency Divider Using Push-Push Oscillator

IEICE transactions on electronics, 2011, Vol.E94-C (8), p.1332-1335

2011

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A 0.18/spl mu/m CMOS LNA for UHF-RFID Reader Application

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1592-1594

2006

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A 0.18-μm 3.3 V 16 k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip

Chinese physics letters, 2008-10, Vol.25 (10), p.3815-3817

2008

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A 0.22 V Quadrature VCO in 90 nm CMOS Process

IEEE microwave and wireless components letters, 2009-09, Vol.19 (9), p.566-568

2009

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A 0.2nJ/pixel 4K 60fps Main-10 HEVC decoder with multi-format capabilities for UHD-TV applications

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC), 2014, p.195-198

2014

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La 0.3 Sr 0.7 Ti 0.3 Fe 0.7 O 3-δ -Based Electrodes for Symmetrical Solid Oxide Fuel Cells by A-Site Deficiency Manipulation

ACS applied energy materials, 2023-01, Vol.6 (2), p.841-855

2023

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A 0.35- Delta mm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers

Microwave and optical technology letters, 2010-12, Vol.52 (12), p.2740-2743

2010

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A 0.35-μm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers

Microwave and optical technology letters, 2010-12, Vol.52 (12), p.2740-2743

2010

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A 0.35 μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage―current feedback topology: 2009 International Electron Devices and Materials Symposium (IEDMS)

Microelectronics and reliability, 2010, Vol.50 (5), p.594-598

2010

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A 0.35 μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage–current feedback topology

Microelectronics and reliability, 2010-05, Vol.50 (5), p.594-598

2010

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A 0.35µm CMOS divide-by-3 LC injection-locked frequency divider

2009 International Symposium on VLSI Design, Automation and Test, 2009, p.303-306

2009

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In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.56-67

2016

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A 0.5-V Biomedical System-on-a-Chip for Intrabody Communication System

IEEE transactions on industrial electronics (1982), 2011-02, Vol.58 (2), p.690-699

2011

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0.5MM×0.5MM 150KPA-Measure-Range High-Temperature Pressure Sensor with High-Performance and Low Fabrication-Cost

2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS), 2023, p.881-884

2023

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La 0.5Sr 0.5CoO 3− δ nanotubes sensor for room temperature detection of ammonia

Sensors and actuators. B, Chemical, 2008, Vol.134 (1), p.62-65

2008

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A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

A 0.02mm2Sub-Sampling PLL with Spur Reduction Technique in 90nm CMOS Technology

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

A 0.13 [Formula Omitted]m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

A 0.13 \mu m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

La 0.14 V 2 O 5 /Reduced Graphene Oxide Composite for Aqueous Zinc−Ion Batteries with Long Cycle Life

0.18 dB Low-noise Figure at 10 GHz for GaN MIS-HEMT with Plasma-enhanced Atomic Layer Deposition SiN Layer

A 0.18 [Formula Omitted]m CMOS Quadrature VCO Using the Quadruple Push-Push Technique

A 0.18 \mu m CMOS Quadrature VCO Using the Quadruple Push-Push Technique

A 0.18.MU.m CMOS Wide-Band Injection-Locked Frequency Divider Using Push-Push Oscillator

A 0.18/spl mu/m CMOS LNA for UHF-RFID Reader Application

A 0.18-μm 3.3 V 16 k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip

A 0.22 V Quadrature VCO in 90 nm CMOS Process

A 0.2nJ/pixel 4K 60fps Main-10 HEVC decoder with multi-format capabilities for UHD-TV applications

La 0.3 Sr 0.7 Ti 0.3 Fe 0.7 O 3-δ -Based Electrodes for Symmetrical Solid Oxide Fuel Cells by A-Site Deficiency Manipulation

A 0.35- Delta mm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers

A 0.35-μm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers

A 0.35 μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage―current feedback topology: 2009 International Electron Devices and Materials Symposium (IEDMS)

A 0.35 μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage–current feedback topology

A 0.35µm CMOS divide-by-3 LC injection-locked frequency divider

In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

A 0.5-V Biomedical System-on-a-Chip for Intrabody Communication System

0.5MM×0.5MM 150KPA-Measure-Range High-Temperature Pressure Sensor with High-Performance and Low Fabrication-Cost

La 0.5Sr 0.5CoO 3− δ nanotubes sensor for room temperature detection of ammonia

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