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Piperlongumine Induces Cellular Apoptosis and Autophagy via the ROS/Akt Signaling Pathway in Human Follicular Thyroid Cancer Cells

International journal of molecular sciences, 2023-04, Vol.24 (9), p.8048

2023

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Association between statin use and second cancer risk in breast cancer patients: a nationwide population-based cohort study

Breast cancer research and treatment, 2021-02, Vol.185 (3), p.773-783

2021

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Nonsteroidal Anti-Inflammatory Drugs Reduce Second Cancer Risk in Patients With Breast Cancer: A Nationwide Population-Based Propensity Score-Matched Cohort Study in Taiwan

Frontiers in oncology, 2021-11, Vol.11, p.756143-756143

2021

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On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure

IEEE electron device letters, 2009-04, Vol.30 (4), p.359-361

2009

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Investigation on a Pd-AlGaN/GaN Schottky Diode-Type Hydrogen Sensor With Ultrahigh Sensing Responses

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3575-3581

2008

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Study of a New Field-Effect Resistive Hydrogen Sensor Based on a Pd/Oxide/AlGaAs Transistor

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1224-1231

2007

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Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

IEEE photonics technology letters, 2009-05, Vol.21 (10), p.609-611

2009

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On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

IEEE journal of quantum electronics, 2009-04, Vol.45 (4), p.367-372

2009

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A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

IEEE photonics technology letters, 2008-12, Vol.20 (23), p.1923-1925

2008

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Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2901-2907

2006

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A hierarchical approach for online temporal lobe seizure detection in long-term intracranial EEG recordings

Journal of neural engineering, 2013-08, Vol.10 (4), p.045004-045004

2013

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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple [Formula Omitted]-Doped Sheets

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3310

2008

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On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

IEEE electron device letters, 2009-04, Vol.30 (4), p.325-327

2009

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Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2689-2695

2006

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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple \delta-Doped Sheets

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3310-3313

2008

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A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

IEEE electron device letters, 2008-01, Vol.29 (1), p.11-14

2008

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Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Journal of applied physics, 2007-02, Vol.101 (3)

2007

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Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode

Applied physics express, 2008-04, Vol.1, p.41102

2008

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SiO2 passivation effect on the hydrogen adsorption performance of a Pd/AlGaN-based Schottky diode

Sensors and actuators. B, Chemical, 2009-03, Vol.136 (2), p.338-343

2009

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Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Electrochemistry communications, 2009, Vol.11 (1), p.65-67

2009

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Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

Journal of applied physics, 2008-07, Vol.104 (2), p.024515-024515-6

2008

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On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

Sensors and actuators. B, Chemical, 2007-07, Vol.125 (1), p.22-29

2007

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Hydrogen sensing properties of a metamorphic high electron mobility transistor

Applied physics letters, 2009-01, Vol.94 (1), p.012102-012102-3

2009

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Further investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect transistor (HFET)

Sensors and actuators. B, Chemical, 2008-06, Vol.132 (2), p.587-592

2008

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Transient response of a transistor-based hydrogen sensor

Sensors and actuators. B, Chemical, 2008-09, Vol.134 (2), p.750-754

2008

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Piperlongumine Induces Cellular Apoptosis and Autophagy via the ROS/Akt Signaling Pathway in Human Follicular Thyroid Cancer Cells

Association between statin use and second cancer risk in breast cancer patients: a nationwide population-based cohort study

Nonsteroidal Anti-Inflammatory Drugs Reduce Second Cancer Risk in Patients With Breast Cancer: A Nationwide Population-Based Propensity Score-Matched Cohort Study in Taiwan

On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure

Investigation on a Pd-AlGaN/GaN Schottky Diode-Type Hydrogen Sensor With Ultrahigh Sensing Responses

Study of a New Field-Effect Resistive Hydrogen Sensor Based on a Pd/Oxide/AlGaAs Transistor

Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

A hierarchical approach for online temporal lobe seizure detection in long-term intracranial EEG recordings

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple [Formula Omitted]-Doped Sheets

On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple \delta-Doped Sheets

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode

SiO2 passivation effect on the hydrogen adsorption performance of a Pd/AlGaN-based Schottky diode

Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

Hydrogen sensing properties of a metamorphic high electron mobility transistor

Further investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect transistor (HFET)

Transient response of a transistor-based hydrogen sensor

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