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Physical and chemical mechanisms in oxide-based resistance random access memory

Nanoscale research letters, 2015-03, Vol.10 (1), p.120-120, Article 120

2015

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Flexible PDMS-Based SERS Substrates Replicated from Beetle Wings for Water Pollutant Detection

Polymers, 2022-12, Vol.15 (1), p.191

2022

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Highly Fault-Tolerant Systolic-Array-Based Matrix Multiplication

Electronics (Basel), 2024-05, Vol.13 (9), p.1780

2024

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Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

IEEE electron device letters, 2014-06, Vol.35 (6), p.630-632

2014

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Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic

IEEE electron device letters, 2017-10, Vol.38 (10), p.1401-1404

2017

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Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

IEEE electron device letters, 2014-06, Vol.35 (6), p.633-635

2014

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An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

IEEE electron device letters, 2015-08, Vol.36 (8), p.772-774

2015

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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3167-3173

2017

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Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory

IEEE electron device letters, 2017-04, Vol.38 (4), p.453-456

2017

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Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

IEEE electron device letters, 2015-06, Vol.36 (6), p.552-554

2015

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The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

Applied physics letters, 2013-05, Vol.102 (20)

2013

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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Nanoscale research letters, 2014-01, Vol.9 (1), p.52-52, Article 52

2014

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Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

IEEE electron device letters, 2014-02, Vol.35 (2), p.217-219

2014

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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1), p.10303-010303

2017

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Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Journal of applied physics, 2013-12, Vol.114 (23)

2013

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Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

IEEE electron device letters, 2014-10, Vol.35 (10), p.1016-1018

2014

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New insights into the pathological mechanisms of cerebrotendinous xanthomatosis in the Taiwanese using genomic and proteomic tools

Proteomics (Weinheim), 2006-02, Vol.6 (3), p.1029-1037

2006

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Fault-Tolerant Near-Memory MAC Design with Redundant Memories

2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan), 2023, p.303-304

2023

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Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

Journal of applied physics, 2013-12, Vol.114 (23)

2013

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The neurophysiological basis of the discrepancy between objective and subjective sleep during the sleep onset period: an EEG-fMRI study

Sleep (New York, N.Y.), 2018-06, Vol.41 (6)

2018

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Sol-Gel Preparation and Luminescence Properties of BaMgAl10O17 ： Eu^2＋ Phosphors

Journal of rare earths, 2006, Vol.24 (6), p.706-711

Chung-Hsin Lu Chung-Tao Chen Baibaswata Bhattacharjee

2006

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High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure

2014 IEEE International Electron Devices Meeting, 2014, p.33.3.1-33.3.4

2014

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Planar Heterojunction Perovskite Solar Cells Incorporating Metal-Organic Framework Nanocrystals

Advanced materials (Weinheim), 2015-11, Vol.27 (44), p.7229-7235

2015

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Physical and chemical mechanisms in oxide-based resistance random access memory

Flexible PDMS-Based SERS Substrates Replicated from Beetle Wings for Water Pollutant Detection

Highly Fault-Tolerant Systolic-Array-Based Matrix Multiplication

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory

Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

New insights into the pathological mechanisms of cerebrotendinous xanthomatosis in the Taiwanese using genomic and proteomic tools

Fault-Tolerant Near-Memory MAC Design with Redundant Memories

Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

The neurophysiological basis of the discrepancy between objective and subjective sleep during the sleep onset period: an EEG-fMRI study

Sol-Gel Preparation and Luminescence Properties of BaMgAl10O17 ： Eu^2＋ Phosphors

High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure

Planar Heterojunction Perovskite Solar Cells Incorporating Metal-Organic Framework Nanocrystals

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