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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Light, science & applications, 2021-04, Vol.10 (1), p.94-94, Article 94

2021

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An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Journal of applied physics, 2021-07, Vol.130 (3)

2021

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Do all screw dislocations cause leakage in GaN-based devices?

Applied physics letters, 2020-02, Vol.116 (6)

2020

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Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter

Applied physics letters, 2021-04, Vol.118 (14)

2021

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High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

IEEE photonics technology letters, 2014-06, Vol.26 (11), p.1136-1138

2014

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GaN microdisks with a single porous optical confinement layer for whispering gallery mode lasing

Applied physics letters, 2024-08, Vol.125 (9)

2024

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

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Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Spin valve effect in CrN/GaN van der Waals heterostructures

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases

Scientific reports, 2018-08, Vol.8 (1), p.1-6, Article 12011

2018

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Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2024-09, Vol.125 (11)

2024

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On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-10, Vol.97 (15)

2010

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RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Applied physics letters, 2022-08, Vol.121 (7)

2022

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Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

Applied physics letters, 2023-09, Vol.123 (12)

2023

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High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Applied physics letters, 2023-04, Vol.122 (14)

2023

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Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Forward tunneling current in GaN-based blue light-emitting diodes

Applied physics letters, 2010-02, Vol.96 (8), p.083504-083504-3

2010

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Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors

Applied surface science, 2016-02, Vol.364, p.886-891

2016

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Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4532-4539

2017

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Optical and quantum electronics, 2021-03, Vol.53 (3), Article 139

2021

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Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Light, science & applications, 2021-12, Vol.10 (1), p.244-244, Article 244

2021

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Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2019-03, Vol.40 (3), p.379-382

2019

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An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Micromachines (Basel), 2023-08, Vol.14 (8), p.1633

2023

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Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Solid-state electronics, 2011-03, Vol.57 (1), p.39-42

2011

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High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates

IEEE photonics technology letters, 2013-04, Vol.25 (7), p.652-654

2013

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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Do all screw dislocations cause leakage in GaN-based devices?

Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter

High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

GaN microdisks with a single porous optical confinement layer for whispering gallery mode lasing

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

Spin valve effect in CrN/GaN van der Waals heterostructures

High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases

Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Forward tunneling current in GaN-based blue light-emitting diodes

Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors

Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates

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