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Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Toward Efficient and Omnidirectional n‑Type Si Solar Cells: Concurrent Improvement in Optical and Electrical Characteristics by Employing Microscale Hierarchical Structures

ACS nano, 2014-03, Vol.8 (3), p.2959-2969

2014

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The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2595-2598

2014

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Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

Nanomaterials (Basel, Switzerland), 2021-10, Vol.11 (10), p.2685

2021

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Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors

IEEE electron device letters, 2008-12, Vol.29 (12), p.1332-1335

2008

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High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Applied physics letters, 2011-04, Vol.98 (16), p.161905-161905-3

2011

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Metal-insulator-semiconductor photodetectors

Sensors, 2010-10, Vol.10 (10), p.8797-8826

2010

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Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition

IEEE transactions on electron devices, 2007-04, Vol.54 (4), p.759-766

2007

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Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures

Nano letters, 2013-08, Vol.13 (8), p.3658-3663

2013

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Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1736-1745

2009

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Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization

IEEE electron device letters, 2009-04, Vol.30 (4), p.368-370

2009

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The Dependence of the Performance of Strained NMOSFETs on Channel Width

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2848-2852

2009

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Realizing High-Efficiency Omnidirectional n‑Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions

ACS nano, 2013-10, Vol.7 (10), p.9325-9335

2013

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Performance enhancement of ring oscillators and transimpedance amplifiers by package strain

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.724-729

2006

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Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3590-3593

2008

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High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2498-2504

2017

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Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism

Advanced materials interfaces, 2024-08, Vol.11 (23), p.n/a

2024

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Electron Mobility in Junctionless Ge Nanowire NFETs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4191-4195

2016

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Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation

Acta materialia, 2016-03, Vol.106, p.171-181

2016

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Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1412-1417

2017

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Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

IEEE transactions on nanotechnology, 2015-09, Vol.14 (5), p.878-882

2015

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Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.2215-2219

2014

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Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors

Journal of lightwave technology, 2004-06, Vol.22 (6), p.1583-1590

2004

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MEXTRAM modeling of Si-SiGe HPTs

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.870-876

2004

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Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method

IEEE journal on exploratory solid-state computational devices and circuits, 2019-12, Vol.5 (2), p.173-181

2019

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Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Toward Efficient and Omnidirectional n‑Type Si Solar Cells: Concurrent Improvement in Optical and Electrical Characteristics by Employing Microscale Hierarchical Structures

The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Metal-insulator-semiconductor photodetectors

Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition

Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon-Trapping Structures

Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors

Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization

The Dependence of the Performance of Strained NMOSFETs on Channel Width

Realizing High-Efficiency Omnidirectional n‑Type Si Solar Cells via the Hierarchical Architecture Concept with Radial Junctions

Performance enhancement of ring oscillators and transimpedance amplifiers by package strain

Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes

High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism

Electron Mobility in Junctionless Ge Nanowire NFETs

Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation

Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack

Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs

Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors

MEXTRAM modeling of Si-SiGe HPTs

Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method

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