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Implantation damage formation in a-, c- and m-plane GaN

Acta materialia, 2017-01, Vol.123, p.177-187

2017

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Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.248-253

2017

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High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Thermally induced evolution of optical and structural properties of Er2O3 films grown on Si substrates by thermal atomic layer deposition

Materials letters, 2020-03, Vol.263, p.127216, Article 127216

2020

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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.269-275

2017

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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Applied surface science, 2014-07, Vol.307, p.461-467

2014

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Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Surfaces and interfaces, 2022-11, Vol.34, p.102377, Article 102377

2022

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Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Journal of physics. Condensed matter, 2010-09, Vol.22 (35), p.355802-355802

2010

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2 /YSZ-based buffered silicon substrates

Journal of physics. Condensed matter, 2009-07, Vol.21 (30), p.306005-306005 (5)

2009

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The high sensitivity of InN under rare earth ion implantation at medium range energy

Journal of physics. D, Applied physics, 2011-07, Vol.44 (29), p.295402

2011

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Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

IEEE transactions on applied superconductivity, 2009-06, Vol.19 (3), p.3375-3378

2009

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The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.305-312

2017

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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Journal of applied physics, 2019-03, Vol.125 (10)

2019

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Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95034

2020

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Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Journal of applied physics, 2016-10, Vol.120 (16)

2016

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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Nanotechnology, 2014-11, Vol.25 (46), p.465302-465302

2014

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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

Surface & coatings technology, 2018-12, Vol.355, p.29-39

2018

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InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

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Interface dislocations in InxGa1–xN/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114011

2015

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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Solar energy materials and solar cells, 2017-02, Vol.160, p.355-360

2017

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Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

Applied physics letters, 2011-03, Vol.98 (12), p.121916-121916-3

2011

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Implantation damage formation in a-, c- and m-plane GaN

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Thermally induced evolution of optical and structural properties of Er2O3 films grown on Si substrates by thermal atomic layer deposition

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2 /YSZ-based buffered silicon substrates

The high sensitivity of InN under rare earth ion implantation at medium range energy

Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

InN/InAlN heterostructures for new generation of fast electronics

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Interface dislocations in InxGa1–xN/GaN heterostructures

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

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