UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 76

Sortiert nach

Implantation damage formation in a-, c- and m-plane GaN

Acta materialia, 2017-01, Vol.123, p.177-187

2017

Link zum Volltext

Verfügbarkeit prüfen

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.248-253

2017

Link zum Volltext

Verfügbarkeit prüfen

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Journal of applied physics, 2014-12, Vol.116 (23)

2014

Link zum Volltext

Verfügbarkeit prüfen

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.269-275

2017

Link zum Volltext

Verfügbarkeit prüfen

Thermally induced evolution of optical and structural properties of Er2O3 films grown on Si substrates by thermal atomic layer deposition

Materials letters, 2020-03, Vol.263, p.127216, Article 127216

2020

Link zum Volltext

Verfügbarkeit prüfen

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Applied surface science, 2014-07, Vol.307, p.461-467

2014

Link zum Volltext

Verfügbarkeit prüfen

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Surfaces and interfaces, 2022-11, Vol.34, p.102377, Article 102377

2022

Link zum Volltext

Verfügbarkeit prüfen

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Journal of physics. Condensed matter, 2010-09, Vol.22 (35), p.355802-355802

2010

Link zum Volltext

Verfügbarkeit prüfen

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

Link zum Volltext

Verfügbarkeit prüfen

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2 /YSZ-based buffered silicon substrates

Journal of physics. Condensed matter, 2009-07, Vol.21 (30), p.306005-306005 (5)

2009

Link zum Volltext

Verfügbarkeit prüfen

The high sensitivity of InN under rare earth ion implantation at medium range energy

Journal of physics. D, Applied physics, 2011-07, Vol.44 (29), p.295402

2011

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

IEEE transactions on applied superconductivity, 2009-06, Vol.19 (3), p.3375-3378

2009

Link zum Volltext
IEEE_Xplore

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.305-312

2017

Link zum Volltext

Verfügbarkeit prüfen

InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

Link zum Volltext

Verfügbarkeit prüfen

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

Link zum Volltext

Verfügbarkeit prüfen

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Journal of applied physics, 2019-03, Vol.125 (10)

2019

Link zum Volltext

Verfügbarkeit prüfen

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95034

2020

Link zum Volltext

Verfügbarkeit prüfen

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Journal of applied physics, 2016-10, Vol.120 (16)

2016

Link zum Volltext

Verfügbarkeit prüfen

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Nanotechnology, 2014-11, Vol.25 (46), p.465302-465302

2014

Link zum Volltext

Verfügbarkeit prüfen

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

Surface & coatings technology, 2018-12, Vol.355, p.29-39

2018

Link zum Volltext

Verfügbarkeit prüfen

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

Link zum Volltext
IEEE_Xplore

Interface dislocations in InxGa1–xN/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

Link zum Volltext

Verfügbarkeit prüfen

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114011

2015

Link zum Volltext

Verfügbarkeit prüfen

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Solar energy materials and solar cells, 2017-02, Vol.160, p.355-360

2017

Link zum Volltext

Verfügbarkeit prüfen

Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

Applied physics letters, 2011-03, Vol.98 (12), p.121916-121916-3

2011

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 76

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(71)
Mit Volltextzugriff
(73)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Physics
(49)
Science & Technology
(45)
Physical Sciences
(32)
Materials Science
(25)
Physics, Applied
(20)
Technology
(20)
Condensed Matter
(13)
Engineering Sciences
(12)
Exact Sciences And Technology
(11)
Optics
(11)
Physics, Condensed Matter
(11)
Gallium Nitrides
(10)
Materials Science, Multidisciplinary
(10)
Molecular Beam Epitaxy
(10)
Chemical Sciences
(9)
Material Chemistry
(9)
Epitaxial Growth
(8)
Life Sciences
(8)
Micro And Nanotechnologies
(8)
Microelectronics
(8)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Implantation damage formation in a-, c- and m-plane GaN

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Thermally induced evolution of optical and structural properties of Er2O3 films grown on Si substrates by thermal atomic layer deposition

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2 /YSZ-based buffered silicon substrates

The high sensitivity of InN under rare earth ion implantation at medium range energy

Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

InN/InAlN heterostructures for new generation of fast electronics

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Interface dislocations in InxGa1–xN/GaN heterostructures

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

Suchergebnisse filtern