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Categorizing natural history trajectories of ambulatory function measured by the 6-minute walk distance in patients with Duchenne muscular dystrophy

Neuromuscular disorders : NMD, 2016-09, Vol.26 (9), p.576-583

2016

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Intrathecal Gene Therapy for Giant Axonal Neuropathy

The New England journal of medicine, 2024-03, Vol.390 (12), p.1092-1104

2024

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First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

2022 International Electron Devices Meeting (IEDM), 2022, p.4.3.1-4.3.4

2022

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A 64-b microprocessor with multimedia support

IEEE journal of solid-state circuits, 1995-11, Vol.30 (11), p.1227-1238

1995

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High-Fat Programming of Hyperglycemia, Hyperinsulinemia, Insulin Resistance, Hyperleptinemia, and Altered Islet Architecture in 3-Month-Old Wistar Rats

ISRN endocrinology, 2012, Vol.2012 (2012), p.1-8

2012

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Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents

2022 International Electron Devices Meeting (IEDM), 2022, p.30.3.1-30.3.4

2022

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High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.17.4.1-17.4.4

2021

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Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.5.5.1-5.5.4

2016

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A 330 MHz 4-way superscalar microprocessor

1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, 1997, p.166-167

1997

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A 64 b microprocessor with multimedia support

Proceedings ISSCC '95 - International Solid-State Circuits Conference, 1995, p.178-179

1995

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A three-million-transistor microprocessor

1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 1992, p.108-109

1992

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Nano letters, 2021-01, Vol.21 (1), p.500-506

2021

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Filling a void by developing the next generation of toxicology experts

American journal of veterinary research, 2024-09, Vol.85 (9)

2024

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Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment

Applied physics letters, 2021-02, Vol.118 (5)

2021

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Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

IEEE electron device letters, 2021-02, Vol.42 (2), p.184-187

2021

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Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1075-1080

2021

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Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1186-1190

2022

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First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2515-2521

2021

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Cerebral X-linked adrenoleukodystrophy: the international hematopoietic cell transplantation experience from 1982 to 1999

Blood, 2004-08, Vol.104 (3), p.881-888

2004

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Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In 2 O 3 Transistors by Reliability Characterization

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5549-5555

2022

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Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

ACS nano, 2017-10, Vol.11 (10), p.10222-10229

2017

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Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Nature electronics, 2020-03, Vol.3 (3), p.141-147

2020

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Molecular and behavioral toxicity assessment of tiafenacil, a novel PPO-inhibiting herbicide, in zebrafish embryos/larvae

Environmental toxicology and pharmacology, 2023-03, Vol.98, p.104084-104084, Article 104084

2023

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A simulation study to evaluate contamination during reuse of N95 respirators and effectiveness of interventions to reduce contamination

Infection control and hospital epidemiology, 2022-06, Vol.43 (6), p.764-769

2022

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Categorizing natural history trajectories of ambulatory function measured by the 6-minute walk distance in patients with Duchenne muscular dystrophy

Intrathecal Gene Therapy for Giant Axonal Neuropathy

First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

A 64-b microprocessor with multimedia support

High-Fat Programming of Hyperglycemia, Hyperinsulinemia, Insulin Resistance, Hyperleptinemia, and Altered Islet Architecture in 3-Month-Old Wistar Rats

Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents

High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles

Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm

A 330 MHz 4-way superscalar microprocessor

A 64 b microprocessor with multimedia support

A three-million-transistor microprocessor

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Filling a void by developing the next generation of toxicology experts

Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment

Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

Cerebral X-linked adrenoleukodystrophy: the international hematopoietic cell transplantation experience from 1982 to 1999

Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In 2 O 3 Transistors by Reliability Characterization

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio

Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Molecular and behavioral toxicity assessment of tiafenacil, a novel PPO-inhibiting herbicide, in zebrafish embryos/larvae

A simulation study to evaluate contamination during reuse of N95 respirators and effectiveness of interventions to reduce contamination

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