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Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

Journal of applied physics, 2022-04, Vol.131 (15)

2022

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InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Sensors and actuators. A. Physical., 2017-08, Vol.263, p.216-223

2017

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Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

IEEE sensors journal, 2022-01, Vol.22 (2), p.1245-1251

2022

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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

IEEE sensors journal, 2019-05, Vol.19 (10), p.3640-3646

2019

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Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Journal of microelectromechanical systems, 2020-10, Vol.29 (5), p.669-676

2020

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Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

Applied physics letters, 2017-06, Vol.110 (25)

2017

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A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

Review of scientific instruments, 2016-09, Vol.87 (9)

2016

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Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond

Physical review. B, 2020-08, Vol.102 (7), p.1, Article 075303

2020

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Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding

Microelectronic engineering, 2017-04, Vol.173, p.54-57

2017

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Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

2021 IEEE Aerospace Conference (50100), 2021, p.1-12

2021

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

RSC advances, 2018-01, Vol.8 (52), p.29976-29979

2018

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1535-1540

2024

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Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor Switching

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1535-1540

2024

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High Temperature and Transient Behavior of GaN Heterostructure Based High Electron Mobility Micro-Pressure Sensors

Chapin, Caitlin

2018

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High-Temperature Electronics Packaging for Simulated Venus Condition

Journal of microelectronics and electronic packaging, 2020-04, Vol.17 (2), p.59-66

2020

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Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Advanced engineering materials, 2020-04, Vol.22 (4), p.n/a

2020

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Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting

2020 IEEE Sensors, 2020, p.1-4

2020

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Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2015, p.284-287

2015

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Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

MRS proceedings, 2015, Vol.1746 (1), p.13-19, Article mrsf14-1746-gg01-04

2015

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Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperaturesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ra05797d

2018-08

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Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017, p.786-789

2017

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Epistemological Pluralism: Reorganizing Interdisciplinary Research

Ecology and society, 2008-12, Vol.13 (2), p.46, Article art46

2008

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Pediatric solid organ transplant recipients positive for severe acute respiratory syndrome coronavirus 2 pre‐transplant

Transplant infectious disease, 2024-06, Vol.26 (3), p.e14284-n/a

2024

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Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond

Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding

Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor Switching

High Temperature and Transient Behavior of GaN Heterostructure Based High Electron Mobility Micro-Pressure Sensors

High-Temperature Electronics Packaging for Simulated Venus Condition

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting

Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures

Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperaturesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ra05797d

Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

Epistemological Pluralism: Reorganizing Interdisciplinary Research

Pediatric solid organ transplant recipients positive for severe acute respiratory syndrome coronavirus 2 pre‐transplant

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