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Electrothermal modeling of IGBTs: application to short-circuit conditions

IEEE transactions on power electronics, 2000-07, Vol.15 (4), p.778-790

2000

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Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Journal of applied physics, 2003-09, Vol.94 (5), p.2992-2998

2003

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A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE transactions on industry applications, 2003-09, Vol.39 (5), p.1508-1513

2003

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OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension

Diamond and related materials, 2004-09, Vol.13 (9), p.1697-1703

2004

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Developing an equivalent thermal model for discrete semiconductor packages

International journal of thermal sciences, 2003-05, Vol.42 (5), p.533-539

2003

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Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension

Materials science forum, 2004-06, Vol.457-460, p.1033-1036

2004

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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.50-54

2000

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Study of 6H–SiC high voltage bipolar diodes under reverse biases

Applied surface science, 2001-12, Vol.184 (1), p.477-482

2001

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Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1775-1780

2004

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Optimal layout for 6H–SiC VJFET controlled current limiting device

Diamond and related materials, 2003-03, Vol.12 (3), p.1220-1223

2003

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P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

Materials Science Forum, 2005-05, Vol.483-485, p.633-636

2005

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Annealing studies of Al-implanted 6H-SiC in an induction furnace

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.325-328

2002

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Experimental characterization of a 4H–SiC high voltage current limiting device

Applied surface science, 2001-12, Vol.184 (1), p.404-407

2001

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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Materials science forum, 2002-04, Vol.389-393, p.827-830

2002

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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Materials science forum, 2004-01, Vol.457-460, p.1129-1132

2004

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Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-03, Vol.90 (3), p.301-308

2002

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A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Materials Science Forum, 2005-01, Vol.483-485, p.1005-1008

2005

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The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Materials science forum, 2004-01, Vol.457-460, p.1025-1028

2004

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State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

IEEE transactions on power electronics, 1994-01, Vol.9 (1), p.112-120

1994

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On-Chip Temperature Monitoring of a SiC Current Limiter

Materials science forum, 2004-01, Vol.457-460, p.1021-1024

2004

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Design of a 600 V silicon carbide vertical power MOSFET

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61 (2), p.497-501

1999

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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Materials science forum, 2002-04, Vol.389-393, p.1403-1406

2002

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LDMOS modeling for analog and RF circuit design

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.469-472

2005

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SiC-Based Current Limiter Devices

Materials science forum, 2004-01, Vol.457-460, p.951-956

2004

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Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Journal of electronic materials, 1999-03, Vol.28 (3), p.219-224

1999

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Electrothermal modeling of IGBTs: application to short-circuit conditions

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

A 4H-SiC high-power-density VJFET as controlled current limiter

OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension

Developing an equivalent thermal model for discrete semiconductor packages

Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Study of 6H–SiC high voltage bipolar diodes under reverse biases

Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD

Optimal layout for 6H–SiC VJFET controlled current limiting device

P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

Annealing studies of Al-implanted 6H-SiC in an induction furnace

Experimental characterization of a 4H–SiC high voltage current limiting device

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

On-Chip Temperature Monitoring of a SiC Current Limiter

Design of a 600 V silicon carbide vertical power MOSFET

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

LDMOS modeling for analog and RF circuit design

SiC-Based Current Limiter Devices

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

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