UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Journal of applied physics, 2003-09, Vol.94 (5), p.2992-2998

2003

Volltextzugriff (PDF)

Edge termination strategies for a 4 kV 4H-SiC thyristor

Solid-state electronics, 2006-07, Vol.50 (7-8), p.1183-1188

2006

Volltextzugriff (PDF)

OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension

Diamond and related materials, 2004-09, Vol.13 (9), p.1697-1703

2004

Volltextzugriff (PDF)

Optimal layout for 6H–SiC VJFET controlled current limiting device

Diamond and related materials, 2003-03, Vol.12 (3), p.1220-1223

2003

Volltextzugriff (PDF)

Annealing studies of Al-implanted 6H-SiC in an induction furnace

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.325-328

2002

Volltextzugriff (PDF)

Developing an equivalent thermal model for discrete semiconductor packages

International journal of thermal sciences, 2003-05, Vol.42 (5), p.533-539

2003

Volltextzugriff (PDF)

Avalanche behavior of low-voltage power MOSFETs

IEEE power electronics letters, 2004-09, Vol.2 (3), p.104-107

2004

Volltextzugriff (PDF)

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.50-54

2000

Volltextzugriff (PDF)

Study of 6H–SiC high voltage bipolar diodes under reverse biases

Applied surface science, 2001-12, Vol.184 (1), p.477-482

2001

Volltextzugriff (PDF)

Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1775-1780

2004

Volltextzugriff (PDF)

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

IEEE transactions on power electronics, 1994-01, Vol.9 (1), p.112-120

1994

Volltextzugriff (PDF)

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Materials science forum, 2004-01, Vol.457-460, p.1129-1132

2004

Volltextzugriff (PDF)

An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures

Microelectronics and reliability, 1998-11, Vol.38 (11), p.1763-1772

1998

Volltextzugriff (PDF)

Experimental characterization of a 4H–SiC high voltage current limiting device

Applied surface science, 2001-12, Vol.184 (1), p.404-407

2001

Volltextzugriff (PDF)

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Materials science forum, 2004-01, Vol.457-460, p.1025-1028

2004

Volltextzugriff (PDF)

On-Chip Temperature Monitoring of a SiC Current Limiter

Materials science forum, 2004-01, Vol.457-460, p.1021-1024

2004

Volltextzugriff (PDF)

Design of a 600 V silicon carbide vertical power MOSFET

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61 (2), p.497-501

1999

Volltextzugriff (PDF)

SiC-Based Current Limiter Devices

Materials science forum, 2004-01, Vol.457-460, p.951-956

2004

Volltextzugriff (PDF)

Electrothermal modeling of IGBTs: application to short-circuit conditions

IEEE transactions on power electronics, 2000-07, Vol.15 (4), p.778-790

2000

Volltextzugriff (PDF)

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Materials science forum, 2004-01, Vol.457-460, p.1133-1136

2004

Volltextzugriff (PDF)

Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures

Solid-state electronics, 2000-04, Vol.44 (4), p.571-579

2000

Volltextzugriff (PDF)

Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges

Microelectronics and reliability, 2001-09, Vol.41 (9), p.1433-1437

2001

Volltextzugriff (PDF)

A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE transactions on industry applications, 2003-09, Vol.39 (5), p.1508-1513

2003

Volltextzugriff (PDF)

Characterisation of deep level trap centres in 6H-SiC p-n junction diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.106-110

1999

Volltextzugriff (PDF)

P–N Junction creation in 6H-SiC by aluminum implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61 (2), p.424-428

1999

Volltextzugriff (PDF)

1 – 25 von 135

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(86)
Mit Volltextzugriff
(126)

Publikationsform

Artikel
(94)
Tagungsberichte
(41)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(105)
Technology
(97)
Engineering Sciences
(67)
Electric Power
(66)
Engineering
(59)
Engineering, Electrical & Electronic
(57)
Physical Sciences
(57)
Physics
(55)
Materials Science
(46)
Materials Science, Multidisciplinary
(40)
Physics, Applied
(36)
Physics, Condensed Matter
(27)
Electronics
(26)
Exact Sciences And Technology
(25)
Applied Sciences
(22)
Silicon Carbide
(22)
Voltage
(20)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(19)
Circuit Simulation
(13)
Diodes
(13)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Edge termination strategies for a 4 kV 4H-SiC thyristor

OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension

Optimal layout for 6H–SiC VJFET controlled current limiting device

Annealing studies of Al-implanted 6H-SiC in an induction furnace

Developing an equivalent thermal model for discrete semiconductor packages

Avalanche behavior of low-voltage power MOSFETs

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Study of 6H–SiC high voltage bipolar diodes under reverse biases

Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures

Experimental characterization of a 4H–SiC high voltage current limiting device

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

On-Chip Temperature Monitoring of a SiC Current Limiter

Design of a 600 V silicon carbide vertical power MOSFET

SiC-Based Current Limiter Devices

Electrothermal modeling of IGBTs: application to short-circuit conditions

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures

Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges

A 4H-SiC high-power-density VJFET as controlled current limiter

Characterisation of deep level trap centres in 6H-SiC p-n junction diodes

P–N Junction creation in 6H-SiC by aluminum implantation

Suchergebnisse filtern