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The epidemiology of male lower urinary tract symptoms associated with benign prostatic hyperplasia: Results of 20 years of Korean community care and surveys

Investigative and Clinical Urology, 2024, 65(1), , pp.69-76

2024

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Image features of aspergillosis arising from the pterygopalatine fossa: a case report and literature review

Oral radiology, 2014-05, Vol.30 (2), p.192-195

2014

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Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.167-170

2007

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Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure

2008 Symposium on VLSI Technology, 2008, p.118-119

2008

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New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

68th Device Research Conference, 2010, p.99-100

2010

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국어의 생략 현상에 대하여

Language & Information Society, 2019-03, Vol.36 (null), p.5-36

Changseok Kang

2019

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The Usage of Korean Demonstratives ‘i, geu, jeo’

Korean Journal of Linguistics, 2016-06, Vol.41 (2), p.201-216

Changseok Kang

2016

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Effects of Eutectic Si and Secondary Dendrite Arm Spacing on the Mechanical Properties of Al-Si-Cu Cast Alloys

Korean Journal of Metals and Materials, 2014-11, Vol.52 (11), p.923-929

2014

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The Author of Eonmunjamo and the Time of Its Composition

Language & Information Society, 2014-07, Vol.22 (null), p.27-52

Changseok Kang

2014

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A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.327-330

2005

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Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-2

2011

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A comprehensive study of degradation behavior of select transistors in the Charge Trap Flash memories

2010 IEEE International Memory Workshop, 2010, p.1-2

2010

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A study on the material and device characteristics of hafnium oxynitride MOSFETs with tantalum nitride gate electrodes

Kang, Changseok

2004

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Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop, 2006, p.54-55

2006

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Self Aligned Trap-Shallow Trench Isolation Scheme for the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, 2007, p.110-111

2007

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Multi-Level NAND Flash Memory with 63 nm-Node TANOS (Si-Oxide-SiN-Al2O3-TaN) Cell Structure

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.21-22

2006

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Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si)NAND Flash Memory with Rounded Corner (RC) Structure

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, 2008, p.117-118

2008

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Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

MRS proceedings, 2006, Vol.933, Article 0933-G02-09

2006

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A 64-Cell NAND Flash Memory with Asymmetric S/D Structure for Sub-40nm Technology and Beyond

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.19-20

2006

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A Mathematical Model for the Deficiency-Excess Mechanism of Yin-Yang in Five Viscera

Chinese journal of integrative medicine, 2014-02, Vol.20 (2), p.155-160

2014

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Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Unsupervised learning for human activity recognition using smartphone sensors

Expert systems with applications, 2014-10, Vol.41 (14), p.6067-6074

2014

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CARDIORESPIRATORY FITNESS, HIGH BODY FAT PERCENTAGE AND THE RISK OF CORONARY CALCIFICATION IN MIDDLE–AGED MEN

Journal of hypertension, 2024-05, Vol.42 (Suppl 1), p.e227

2024

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Nickel-Catalyzed Regio- and Enantioselective Hydroamination of Unactivated Alkenes Using Carbonyl Directing Groups

Journal of the American Chemical Society, 2022-05, Vol.144 (20), p.9091-9100

2022

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The epidemiology of male lower urinary tract symptoms associated with benign prostatic hyperplasia: Results of 20 years of Korean community care and surveys

Image features of aspergillosis arising from the pterygopalatine fossa: a case report and literature review

Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure

New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

The epidemiology of male lower urinary tract symptoms associated with benign prostate hyperplasia: Results of 20 years of Korean community care and surveys

국어의 생략 현상에 대하여

The Usage of Korean Demonstratives ‘i, geu, jeo’

Effects of Eutectic Si and Secondary Dendrite Arm Spacing on the Mechanical Properties of Al-Si-Cu Cast Alloys

The Author of Eonmunjamo and the Time of Its Composition

A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory

A comprehensive study of degradation behavior of select transistors in the Charge Trap Flash memories

A study on the material and device characteristics of hafnium oxynitride MOSFETs with tantalum nitride gate electrodes

Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

Self Aligned Trap-Shallow Trench Isolation Scheme for the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Multi-Level NAND Flash Memory with 63 nm-Node TANOS (Si-Oxide-SiN-Al2O3-TaN) Cell Structure

Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si)NAND Flash Memory with Rounded Corner (RC) Structure

Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

A 64-Cell NAND Flash Memory with Asymmetric S/D Structure for Sub-40nm Technology and Beyond

A Mathematical Model for the Deficiency-Excess Mechanism of Yin-Yang in Five Viscera

Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Unsupervised learning for human activity recognition using smartphone sensors

CARDIORESPIRATORY FITNESS, HIGH BODY FAT PERCENTAGE AND THE RISK OF CORONARY CALCIFICATION IN MIDDLE–AGED MEN

Nickel-Catalyzed Regio- and Enantioselective Hydroamination of Unactivated Alkenes Using Carbonyl Directing Groups

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