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Perspective: A review on memristive hardware for neuromorphic computation

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

Nanotechnology, 2018-08, Vol.29 (34), p.345202-345202

2018

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Various Threshold Switching Devices for Integrate and Fire Neuron Applications

Advanced electronic materials, 2019-09, Vol.5 (9), p.n/a

2019

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Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4763-4767

2017

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Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

AIP advances, 2016-02, Vol.6 (2), p.025203-025203-7

2016

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Investigation of I-V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.404-408

2019

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NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.250-253

2018

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Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device

IEEE electron device letters, 2020-05, Vol.41 (5), p.713-716

2020

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Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array

IEEE electron device letters, 2018-08, Vol.39 (8), p.1171-1174

2018

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Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

Nanotechnology, 2017-03, Vol.28 (11), p.115707-115707

2017

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Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

IEEE electron device letters, 2018-02, Vol.39 (2), p.312-315

2018

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Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system

Nanotechnology, 2018-03, Vol.29 (11), p.115203-115203

2018

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Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer

Advanced electronic materials, 2021-02, Vol.7 (2), p.n/a

2021

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3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Advanced electronic materials, 2019-07, Vol.5 (7), p.n/a

2019

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Hardware implementation of neural network using pre-programmed resistive device for pattern recognition

Solid-state electronics, 2019-03, Vol.153, p.79-83

2019

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Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO 2 Layer

Advanced electronic materials, 2021-02, Vol.7 (2)

2021

Volltextzugriff (PDF)

Effects of Liner Thickness on the Reliability of AgTe/TiO 2 -Based Threshold Switching Devices

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4763-4767

2017

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Effect of conductance linearity and multi-level cell characteristics of TaO x -based synapse device on pattern recognition accuracy of neuromorphic system

Nanotechnology, 2018-03, Vol.29 (11), p.115203

2018

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Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications

Advanced electronic materials, 2021-03, Vol.7 (3), p.n/a

2021

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Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.404-408

2019

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Communication—Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM

ECS journal of solid state science and technology, 2017, Vol.6 (7), p.P440-P442

2017

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Ultra-thin 2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff reset <1nA) for 3D Storage Class Memory

2019 Symposium on VLSI Technology, 2019, p.T62-T63

2019

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NbO 2 -Based Frequency Storable Coupled Oscillators for Associative Memory Application

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.250-253

2018

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Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016, p.84-85

2016

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Investigation of [Formula Omitted] Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.404

2019

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Perspective: A review on memristive hardware for neuromorphic computation

A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Investigation of I-V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application

Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device

Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Hardware implementation of neural network using pre-programmed resistive device for pattern recognition

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO 2 Layer

Effects of Liner Thickness on the Reliability of AgTe/TiO 2 -Based Threshold Switching Devices

Effect of conductance linearity and multi-level cell characteristics of TaO x -based synapse device on pattern recognition accuracy of neuromorphic system

Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications

Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications

Communication—Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM

Ultra-thin 2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff reset <1nA) for 3D Storage Class Memory

NbO 2 -Based Frequency Storable Coupled Oscillators for Associative Memory Application

Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown

Investigation of [Formula Omitted] Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

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