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New Depletion-Mode IGZO TFT Shift Register

IEEE electron device letters, 2011-02, Vol.32 (2), p.158-160

2011

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IEEE_Xplore

Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

Applied physics letters, 2011-12, Vol.99 (24), p.242109-242109-3

2011

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A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

IEEE electron device letters, 2011-08, Vol.32 (8), p.1092-1094

2011

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IEEE_Xplore

Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel Displays

IEEE transactions on electron devices, 2007-04, Vol.54 (4), p.654-662

2007

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IEEE_Xplore

A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3012-3017

2011

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IEEE_Xplore

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

IEEE electron device letters, 2011-12, Vol.32 (12), p.1704-1706

2011

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IEEE_Xplore

a-Si:H Thin-Film Transistor-Driven Flexible Color E-Paper Display on Flexible Substrates

IEEE electron device letters, 2010-08, Vol.31 (8), p.833-835

2010

Link zum Volltext
IEEE_Xplore

Highly Flexible AM-OLED Display With Integrated Gate Driver Using Amorphous Silicon TFT on Ultrathin Metal Foil

Journal of display technology, 2010-11, Vol.6 (11), p.565-570

2010

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IEEE_Xplore

A Novel Level Shifter Employing IGZO TFT

IEEE electron device letters, 2011-02, Vol.32 (2), p.167-169

2011

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IEEE_Xplore

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.329-336

2008

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IEEE_Xplore

68.1: Capacitance-Voltage Characteristics of Top Emitting Organic Light Emitting Diodes for Mobile Display Application

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1002-1005

2011

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41‐2: Invited Paper: Active Matrix Micro‐LED Stretchable Display and Technical Challenges

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.517-520

2022

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Wearable 4-in. QVGA full-color-video flexible AMOLEDs for rugged applications

Journal of the Society for Information Display, 2010-01, Vol.18 (1), p.50-56

2010

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Interface diffusion characteristics of Al–2 at.%Nd/n + a-Si:H and Al–2 at.%Nd/n + poly-Si bilayers

Thin solid films, 2012, Vol.520 (6), p.1982-1987

2012

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P-20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with N2O Plasma Treatment

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1170-1172

2011

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Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs

Journal of the Society for Information Display, 2007-08, Vol.15 (8), p.545-551

2007

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A Novel Five-Photo-Mask Low-Temperature Polycrystalline-Silicon CMOS Structure With Improved Contact Resistance

IEEE electron device letters, 2009-01, Vol.30 (1), p.42-44

2009

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IEEE_Xplore

Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices

Japanese Journal of Applied Physics, 2007-03, Vol.46 (3S), p.1343

2007

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P-29: A Novel Six-Mask Process for High Performance μc-Si TFT Using Indirect Thermal Crystallization

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1198-1200

2011

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10.1: Invited Paper: Wearable 4-Inch QVGA Full Color Video Flexible AMOLEDs for Rugged Applications

SID International Symposium Digest of technical papers, 2009-06, Vol.40 (1), p.96-99

2009

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76.2: Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display

SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1132-1135

2010

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A study of roll-printing technology for TFT-LCD fabrication

Journal of the Society for Information Display, 2009-04, Vol.17 (4), p.301-307

2009

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P-201L: Late-News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs

SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1373-1375

2010

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P-27: A Novel IGZO TFT Shift Register with Node-Shared Structure

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1191-1194

2011

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36.3: Invited Paper: Highly Reliable Flexible Active Matrix OLED Driven by a-Si TFT Device

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.494-497

2011

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New Depletion-Mode IGZO TFT Shift Register

Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel Displays

A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

a-Si:H Thin-Film Transistor-Driven Flexible Color E-Paper Display on Flexible Substrates

Highly Flexible AM-OLED Display With Integrated Gate Driver Using Amorphous Silicon TFT on Ultrathin Metal Foil

A Novel Level Shifter Employing IGZO TFT

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

68.1: Capacitance-Voltage Characteristics of Top Emitting Organic Light Emitting Diodes for Mobile Display Application

41‐2: Invited Paper: Active Matrix Micro‐LED Stretchable Display and Technical Challenges

Wearable 4-in. QVGA full-color-video flexible AMOLEDs for rugged applications

Interface diffusion characteristics of Al–2 at.%Nd/n + a-Si:H and Al–2 at.%Nd/n + poly-Si bilayers

P-20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with N2O Plasma Treatment

Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs

A Novel Five-Photo-Mask Low-Temperature Polycrystalline-Silicon CMOS Structure With Improved Contact Resistance

Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices

P-29: A Novel Six-Mask Process for High Performance μc-Si TFT Using Indirect Thermal Crystallization

10.1: Invited Paper: Wearable 4-Inch QVGA Full Color Video Flexible AMOLEDs for Rugged Applications

76.2: Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display

A study of roll-printing technology for TFT-LCD fabrication

P-201L: Late-News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs

P-27: A Novel IGZO TFT Shift Register with Node-Shared Structure

36.3: Invited Paper: Highly Reliable Flexible Active Matrix OLED Driven by a-Si TFT Device

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