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First-Principles Study of the Optical Properties of TMDC/Graphene Heterostructures

Photonics, 2022-06, Vol.9 (6), p.387

2022

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Enhanced Carrier Transport Performance of Monolayer Hafnium Disulphide by Strain Engineering

Nanomaterials (Basel, Switzerland), 2024-08, Vol.14 (17), p.1420

2024

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Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

Applied physics express, 2019-07, Vol.12 (7), p.71003

2019

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Numerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cell

IEEE electron device letters, 2009-12, Vol.30 (12), p.1305-1307

2009

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Band Structure and Effective Mass in Monolayer MoS2

Journal of nanoscience and nanotechnology, 2015-11, Vol.15 (11), p.9151-9157

2015

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Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.900-904

2018

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Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1736-1745

2009

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A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors

Organic electronics, 2011-09, Vol.12 (9), p.1527-1532

2011

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Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction

Thin solid films, 2010-10, Vol.518 (24), p.7381-7384

2010

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How high can the mobility of monolayer tungsten disulfide be?

Vacuum, 2017-06, Vol.140, p.172-175

2017

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Strain Effect and Surface Orientation on Drive Current Enhancement of Ballistic Germanium n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2008-07, Vol.47 (7R), p.5345

Chang, Shu-Tong

2008

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Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates

Journal of the Korean Physical Society, 2010, 57(61), , pp.1563-1568

2010

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Correlating the Density of Trap-States and the Field-Effect Performance in Metal-Oxide Thin-Film Transistors With High- \kappa Gate Dielectrics via a Trap-Limited Conduction Method

IEEE transactions on nanotechnology, 2021, Vol.20, p.321-331

2021

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Band structure of molybdenum disulfide: from first principle to analytical band model

Journal of computational electronics, 2022-06, Vol.21 (3), p.571-581

2022

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Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors

Microelectronic engineering, 2015-04, Vol.138, p.12-16

2015

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Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates

Electronics (Basel), 2024-06, Vol.13 (11), p.2143

2024

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Electron and Hole Mobilities in Orthorhombically Strained Silicon

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3070

Chang, Shu-Tong

2006

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A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs

Journal of nanoscience and nanotechnology, 2017-11, Vol.17 (11), p.8511-8515

2017

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Detection of Charged Proteins with a Bio-Sensor Device Using a Semiconductor-on-Insulator Structure

Journal of nanoscience and nanotechnology, 2017-11, Vol.17 (11), p.8506-8510

2017

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Nanoscale Strained Si/SiGe Heterojunction Trigate Field Effect Transistors

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.5304

Chang, Shu-Tong

2005

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Compact conduction band model for transition-metal dichalcogenide alloys

Microelectronics and reliability, 2018-04, Vol.83, p.223-229

2018

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Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure

Journal of nanoscience and nanotechnology, 2017-11, Vol.17 (11), p.8516-8521

2017

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Performance Investigation of Nanoscale Strained Ge pMOSFETs with a GeSn Alloy Stressor

Journal of nanoscience and nanotechnology, 2015-11, Vol.15 (11), p.9158-9162

2015

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Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays

Japanese Journal of Applied Physics, 2009-02, Vol.48 (2R), p.21301

2009

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Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET

Journal of nanoscience and nanotechnology, 2015-03, Vol.15 (3), p.2168-2172

2015

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First-Principles Study of the Optical Properties of TMDC/Graphene Heterostructures

Enhanced Carrier Transport Performance of Monolayer Hafnium Disulphide by Strain Engineering

Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

Numerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cell

Band Structure and Effective Mass in Monolayer MoS2

Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors

A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors

Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction

How high can the mobility of monolayer tungsten disulfide be?

Strain Effect and Surface Orientation on Drive Current Enhancement of Ballistic Germanium n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates

Correlating the Density of Trap-States and the Field-Effect Performance in Metal-Oxide Thin-Film Transistors With High- \kappa Gate Dielectrics via a Trap-Limited Conduction Method

Band structure of molybdenum disulfide: from first principle to analytical band model

Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors

Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates

Electron and Hole Mobilities in Orthorhombically Strained Silicon

A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs

Detection of Charged Proteins with a Bio-Sensor Device Using a Semiconductor-on-Insulator Structure

Nanoscale Strained Si/SiGe Heterojunction Trigate Field Effect Transistors

Compact conduction band model for transition-metal dichalcogenide alloys

Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure

Performance Investigation of Nanoscale Strained Ge pMOSFETs with a GeSn Alloy Stressor

Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays

Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET

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