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A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage

Electronics (Basel), 2023-10, Vol.12 (20), p.4242

2023

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Indium penetration through thermally grown silicon oxide

Vacuum, 2015-08, Vol.118, p.133-136

2015

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Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory

Current Applied Physics, 2016, 16(5), , pp.605-610

2016

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Corrigendum to “Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory” [Curr. Appl. Phys. 16 (5) (2016) 605−610]

Current Applied Physics, 2017, 17(4), , pp.592-592

2017

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Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

AIP advances, 2015-10, Vol.5 (10), p.107128-107128-5

2015

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Deactivation of phosphorus in silicon due to implanted nitrogen

Physica status solidi. C, 2014-01, Vol.11 (1), p.24-27

2014

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Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1118-1127

2009

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Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Current Applied Physics, 2015, 15(4), , pp.535-540

2015

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Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.96501

2020

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Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology

IEEE electron device letters, 2013-09, Vol.34 (9), p.1124-1126

2013

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Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8), p.81301

2018

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Si-H bond breaking induced retention degradation during packaging process of 256 mbit DRAMs with negative wordline bias

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.484-491

2005

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Activation and deactivation of phosphorus in silicon-on-insulator substrates

Materials science in semiconductor processing, 2016-02, Vol.42, p.219-222

2016

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Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Applied surface science, 2015-11, Vol.356, p.1150-1154

2015

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Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions

Vacuum, 2017-06, Vol.140, p.161-164

2017

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Novel test structure for evaluating dynamic dopant activation after ion implantation

2016 International Conference on Microelectronic Test Structures (ICMTS), 2016, p.168-171

2016

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Deactivation of Phosphorus by Carbon in Recrystallized Silicon

ECS journal of solid state science and technology, 2019, Vol.8 (4), p.P262-P266

2019

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Effect of implantation damage on transient loss of phosphorus in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-10, Vol.313, p.1-4

2013

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Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Diffusion of Indium Implanted in Silicon Oxides

Japanese Journal of Applied Physics, 2009-05, Vol.48 (5R), p.56501

2009

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Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-11, Vol.28 (6), p.1158-1163

2010

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Modeling of phosphorus deactivation in polysilicon for simulation of memory process in nanometer era

Solid-state electronics, 2012-09, Vol.75, p.16-21

2012

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Improvement in Junction Breakdown and GIDL using MFLA in DRAM Product

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H363

2011

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Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9R), p.91403

2011

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Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9), p.091403-091403-6

2011

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A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage

Indium penetration through thermally grown silicon oxide

Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory

Corrigendum to “Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory” [Curr. Appl. Phys. 16 (5) (2016) 605−610]

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Deactivation of phosphorus in silicon due to implanted nitrogen

Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations

Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology

Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

Si-H bond breaking induced retention degradation during packaging process of 256 mbit DRAMs with negative wordline bias

Activation and deactivation of phosphorus in silicon-on-insulator substrates

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions

Novel test structure for evaluating dynamic dopant activation after ion implantation

Deactivation of Phosphorus by Carbon in Recrystallized Silicon

Effect of implantation damage on transient loss of phosphorus in silicon

Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire

Diffusion of Indium Implanted in Silicon Oxides

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Modeling of phosphorus deactivation in polysilicon for simulation of memory process in nanometer era

Improvement in Junction Breakdown and GIDL using MFLA in DRAM Product

Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide

Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide

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