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DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (11), p.934

2024

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Rapid fabrication of three-dimensional gold dendritic nanoforests for visible light-enhanced methanol oxidation

Electrochimica acta, 2016-02, Vol.192, p.15-21

2016

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Voltage modulation efficiency in scanning capacitance microscopy

Ultramicroscopy, 2021-05, Vol.224, p.113266-113266, Article 113266

2021

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Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

Applied physics letters, 2009-06, Vol.94 (24)

2009

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Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

Applied physics letters, 2003-05, Vol.82 (20), p.3493-3495

2003

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Localized Electroless Ag Plating at a Tip Apex for Scanning Kelvin Probe Microscopy

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.06GF03-06GF03-4

2013

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A facile approach to prepare silicon-based Pt-Ag tubular dendritic nano-forests (tDNFs) for solar-light-enhanced methanol oxidation reaction

Nanoscale research letters, 2015-02, Vol.10 (1), p.74-74, Article 74

2015

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Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

Nanoscale research letters, 2015-12, Vol.10 (1), p.401-401, Article 401

2015

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Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates

Applied physics letters, 2008-06, Vol.92 (24)

2008

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Crack-free GaN grown on AlGaN∕(111)Si micropillar array fabricated by polystyrene microsphere lithography

Applied physics letters, 2007-12, Vol.91 (26)

2007

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Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Ultramicroscopy, 2008-10, Vol.108 (11), p.1495-1499

2008

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Improvement of current injection of porous silicon

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1574-1577

1997

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Variations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbation

Applied physics letters, 2005-02, Vol.86 (9)

2005

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Localized two-step galvanic replacement of a tip apex modification for field sensitive scanning probe microscopy

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), 2014, p.176-179

2014

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A gold nano-dot modified silicon tip apex for scanning Kelvin probe microscopy

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015, p.613-616

2015

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Defects in metamorphic InxAl1−xAs (x<0.4) epilayers grown on GaAs substrates

Journal of applied physics, 1997-07, Vol.82 (1), p.210-213

1997

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Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template

Microelectronics, 2006-12, Vol.37 (12), p.1523-1527

2006

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Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers

Electronics letters, 1997-08, Vol.33 (17), p.1489

1997

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Porous silicon light-emitting diode with tunable color

Solid-state electronics, 1997-05, Vol.41 (5), p.757-759

1997

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Investigations of photo-assisted conductive atomic force microscopy on III-nitrides

Microelectronics, 2009-02, Vol.40 (2), p.353-356

2009

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Growth and characterization of crack-free semipolar { 1 - 101 } In Ga N ∕ Ga N multiple-quantum well on V-grooved (001)Si substrates

Applied physics letters, 2008-06, Vol.92 (24), p.241904-241904-3

2008

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Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contactto AlGaN/GaN heterostructures

Applied physics letters, 2009-06, Vol.94 (24), p.243502-243502-3

2009

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Crack-free GaN grown on Al Ga N ∕ ( 111 ) Si micropillar array fabricatedby polystyrene microsphere lithography

Applied physics letters, 2007-12, Vol.91 (26), p.261910-261910-3

2007

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A comprehensive study of Ge1−xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Applied physics letters, 2004-10, Vol.85 (14), p.2797-2799

2004

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DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy

Rapid fabrication of three-dimensional gold dendritic nanoforests for visible light-enhanced methanol oxidation

Voltage modulation efficiency in scanning capacitance microscopy

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

Localized Electroless Ag Plating at a Tip Apex for Scanning Kelvin Probe Microscopy

A facile approach to prepare silicon-based Pt-Ag tubular dendritic nano-forests (tDNFs) for solar-light-enhanced methanol oxidation reaction

Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates

Crack-free GaN grown on AlGaN∕(111)Si micropillar array fabricated by polystyrene microsphere lithography

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Improvement of current injection of porous silicon

Variations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbation

Localized two-step galvanic replacement of a tip apex modification for field sensitive scanning probe microscopy

A gold nano-dot modified silicon tip apex for scanning Kelvin probe microscopy

Defects in metamorphic InxAl1−xAs (x<0.4) epilayers grown on GaAs substrates

Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template

Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers

Porous silicon light-emitting diode with tunable color

Investigations of photo-assisted conductive atomic force microscopy on III-nitrides

Growth and characterization of crack-free semipolar { 1 - 101 } In Ga N ∕ Ga N multiple-quantum well on V-grooved (001)Si substrates

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contactto AlGaN/GaN heterostructures

Crack-free GaN grown on Al Ga N ∕ ( 111 ) Si micropillar array fabricatedby polystyrene microsphere lithography

A comprehensive study of Ge1−xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

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