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A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

2011 Proceedings of the ESSCIRC (ESSCIRC), 2011, p.447-450

2011

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A 0.1-4.0-GHz Inductorless Direct-Sequence Spread-Spectrum-Based Ground-Penetrating Radar System-on-Chip

IEEE microwave and wireless components letters, 2021-06, Vol.31 (6), p.827-830

2021

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A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.563-566

2000

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Al 0.15 Ga 0.85 N ∕ Ga N high electron mobility transistor structures grownon p -type Si substrates

Applied physics letters, 2006-09, Vol.89 (13), p.132107-132107-3

2006

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A 0.18-[Formula Omitted] Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

IEEE transactions on microwave theory and techniques, 2011-01, Vol.59 (1), p.116

2011

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A 0.18- \mu} Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

IEEE transactions on microwave theory and techniques, 2011-01, Vol.59 (1), p.116-124

2011

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A 0.18- mu hbox m Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

IEEE transactions on microwave theory and techniques, 2011-01, Vol.59 (1), p.116-124

2011

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A 0.18-μm Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

IEEE transactions on microwave theory and techniques, 2011, Vol.59 (1), p.116-124

2011

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A 0.18 /spl mu/m CMOS logic technology with dual gate oxide and low-k interconnect for high-performance and low-power applications

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.11-12

1999

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A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.266-267

2010

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A 0.3-V 7.6-fJ/conv-step delta-sigma time-to-digital converter with a gated-free ring oscillator

2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), 2017, p.221-224

2017

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A 0.48V 0.57nJ/pixel video-recording SoC in 65nm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.158-159

2013

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0.5–6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 [micro sign]m CMOS technology

IET microwaves, antennas & propagation, 2011, Vol.5 (2), p.167

2011

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0.5―6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 μm CMOS technology

IET microwaves, antennas & propagation, 2011-01, Vol.5 (2), p.167-174

2011

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0.5-6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 µm CMOS technology

IET microwaves, antennas & propagation, 2011-01, Vol.5 (2), p.167

2011

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A 0.5-7.5 GHz ultra low-voltage low-power mixer using bulk-injection method by 0.1 8-μm CMOS technology

IEEE microwave and wireless components letters, 2007, Vol.17 (7), p.531-533

2007

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A 0.5-7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18- [mu]m CMOS Technology

IEEE microwave and wireless components letters, 2007-07, Vol.17 (7), p.531-533

2007

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A 0.5–7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18-$\mu$m CMOS Technology

IEEE microwave and wireless components letters, 2007-07, Vol.17 (7), p.531-533

2007

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A 0.5-7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18- \mum CMOS Technology

IEEE microwave and wireless components letters, 2007-07, Vol.17 (7), p.531-533

2007

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Al 0.5 Nb 1.5 (PO 4 ) 3

Acta crystallographica. Section E, Structure reports online, 2011-03, Vol.67 (3), p.i23-i23

2011

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Al(0.5)Nb(1.5)(PO(4))(3)

Acta crystallographica. Section E, Structure reports online, 2011-02, Vol.67 (Pt 3), p.i23-i23

2011

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A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.56-67

2016

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A 0.6-V V DD W -Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

IEEE microwave and wireless components letters, 2021-05, Vol.31 (5), p.481-484

2021

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A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS

2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, p.768-771

2021

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A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

IEEE microwave and wireless components letters, 2021-05, Vol.31 (5), p.481-484

2021

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A 0.06-psRMS SSC-induced jitter, ΔΣ-dithering-free, 6-GHz spread-spectrum clock generator for serial-ATA generation

A 0.1-4.0-GHz Inductorless Direct-Sequence Spread-Spectrum-Based Ground-Penetrating Radar System-on-Chip

A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

Al 0.15 Ga 0.85 N ∕ Ga N high electron mobility transistor structures grownon p -type Si substrates

A 0.18-[Formula Omitted] Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

A 0.18- \mu} Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

A 0.18- mu hbox m Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

A 0.18-μm Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

A 0.18 /spl mu/m CMOS logic technology with dual gate oxide and low-k interconnect for high-performance and low-power applications

A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications

A 0.3-V 7.6-fJ/conv-step delta-sigma time-to-digital converter with a gated-free ring oscillator

A 0.48V 0.57nJ/pixel video-recording SoC in 65nm CMOS

0.5–6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 [micro sign]m CMOS technology

0.5―6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 μm CMOS technology

0.5-6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 µm CMOS technology

A 0.5-7.5 GHz ultra low-voltage low-power mixer using bulk-injection method by 0.1 8-μm CMOS technology

A 0.5-7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18- [mu]m CMOS Technology

A 0.5–7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18-$\mu$m CMOS Technology

A 0.5-7.5 GHz Ultra Low-Voltage Low-Power Mixer Using Bulk-Injection Method by 0.18- \mum CMOS Technology

Al 0.5 Nb 1.5 (PO 4 ) 3

Al(0.5)Nb(1.5)(PO(4))(3)

A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

A 0.6-V V DD W -Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS

A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

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