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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

IEEE electron device letters, 2021-09, Vol.42 (9), p.1299-1302

2021

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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Materials, 2023-04, Vol.16 (9), p.3376

2023

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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT

Energies (Basel), 2023-04, Vol.16 (9), p.3657

2023

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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6

2023

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Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter

Energies (Basel), 2021-09, Vol.14 (18), p.5996

2021

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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Materials, 2021-11, Vol.14 (21), p.6558

2021

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A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

IEEE electron device letters, 2022-10, Vol.43 (10), p.1629-1632

2022

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Power Receiving Unit for High-Power Resonant Wireless Power Transfer

Energies (Basel), 2023-12, Vol.16 (23), p.7856

2023

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Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies (Basel), 2021-09, Vol.14 (18), p.5966

2021

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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

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Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer

Energies (Basel), 2021-06, Vol.14 (12), p.3656

2021

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT

Energies (Basel), 2023-08, Vol.16 (16), p.5928

2023

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Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Energies (Basel), 2022-05, Vol.15 (9), p.3197

2022

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Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Physica status solidi. A, Applications and materials science, 2018-06, Vol.215 (11), p.n/a

2018

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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Micromachines (Basel), 2023-04, Vol.14 (5), p.931

2023

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Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Electronics (Basel), 2023-10, Vol.12 (20), p.4336

2023

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Lithium Battery Model and Its Application to Parallel Charging

Energies (Basel), 2022-07, Vol.15 (13), p.4767

2022

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Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

Micromachines (Basel), 2023-05, Vol.14 (5), p.1011

2023

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Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

IEEE transactions on nanotechnology, 2022, Vol.21, p.328-331

2022

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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Micromachines (Basel), 2022-12, Vol.13 (12), p.2140

2022

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Coherent phonon manipulation in coupled mechanical resonators

Nature physics, 2013-08, Vol.9 (8), p.480-484

2013

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Design of High Peak Power Pulsed Laser Diode Driver

Photonics, 2022-09, Vol.9 (9), p.652

2022

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Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer

Coatings (Basel), 2021-12, Vol.11 (12), p.1494

2021

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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

Power Receiving Unit for High-Power Resonant Wireless Power Transfer

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT

Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Lithium Battery Model and Its Application to Parallel Charging

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Coherent phonon manipulation in coupled mechanical resonators

Design of High Peak Power Pulsed Laser Diode Driver

Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer

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