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Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

IEEE electron device letters, 2016-01, Vol.37 (1), p.12-15

2016

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An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2662-2667

2014

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Dynamic magnetic properties of a double-layer core–shell graphene nanoisland in an oscillating magnetic field

Journal of magnetism and magnetic materials, 2020-12, Vol.515, p.167306, Article 167306

2020

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Effects of Roughly Focused Extracorporeal Shock Waves Therapy on the Expressions of Bone Morphogenetic Protein-2 and Osteoprotegerin in Osteoporotic Fracture in Rats

Chinese medical journal, 2016-11, Vol.129 (21), p.2567-2575

2016

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Dielectric properties of an antiferroelectric/ferroelectric BiFeO3/Co bilayer structure

Ceramics international, 2020-10, Vol.46 (14), p.22907-22918

2020

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Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.936-942

2014

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Monte Carlo study of the magnetic properties and magnetocaloric effect of an AFM/FM BiFeO3/Co bilayer

Communications in theoretical physics, 2021-09, Vol.73 (9)

2021

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Insight into dynamic magnetic properties of YMnO3/FM bilayer in a time-dependent magnetic field

European physical journal plus, 2021-03, Vol.136 (3), p.290, Article 290

2021

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3-D Holographic Data Storage Circuit Design

IEEE transactions on magnetics, 2014-07, Vol.50 (7), p.1-5

2014

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Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

IEEE electron device letters, 2012-02, Vol.33 (2), p.188-190

2012

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A new fluorescent sensor based on heterometallic Cd(II)–Ba(II)-based coordination polymer for detection of Cu2+ ion and treatment activity on psoriasis metabolic syndrome

Journal of porous materials, 2021-10, Vol.28 (5), p.1421-1428

2021

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7.7 A 2.16pJ/b 112Gb/s PAM-4 Transceiver with Time-Interleaved 2b/3b ADCs and Unbalanced Baud-Rate CDR for XSR Applications in 28nm CMOS

2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, Vol.67, p.136-138

2024

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Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption

IEEE electron device letters, 2014-05, Vol.35 (5), p.509-511

2014

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Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High- \kappa Gated MOS Devices

IEEE electron device letters, 2007-05, Vol.28 (5), p.432-435

2007

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A novel measurement theory for inventory of working fluid and vacuum pressure of heat pipe

Journal of the Chinese Institute of Engineers, 2009-09, Vol.32 (6), p.765-770

2009

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Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Microelectronic engineering, 2015-04, Vol.138, p.81-85

2015

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Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Microelectronic engineering, 2013-09, Vol.109, p.64-67

2013

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Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering

Solid-state electronics, 2014-11, Vol.101, p.33-37

2014

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An unconstrained virtual bone clamper for a knee surgical robot using visual servoing technique

Journal of the Chinese Institute of Engineers, 2010-04, Vol.33 (3), p.379-386

2010

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Tunneling component suppression in charge pumping measurement and reliability study for high- k gated MOSFETs

Microelectronics and reliability, 2011-12, Vol.51 (12), p.2110-2114

2011

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Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack

Solid-state electronics, 2012-12, Vol.78, p.17-21

2012

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Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption

IEEE electron device letters, 2014-05, Vol.35 (5), p.509-511

2014

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Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Microelectronic engineering, 2009-07, Vol.86 (7), p.1703-1706

2009

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Magnetic and thermodynamic properties of a triple-layer film superlattice: A Monte Carlo study

Superlattices and microstructures, 2019-12, Vol.136, p.106325, Article 106325

2019

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Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks

Solid-state electronics, 2010-11, Vol.54 (11), p.1474-1478

2010

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Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer

Dynamic magnetic properties of a double-layer core–shell graphene nanoisland in an oscillating magnetic field

Effects of Roughly Focused Extracorporeal Shock Waves Therapy on the Expressions of Bone Morphogenetic Protein-2 and Osteoprotegerin in Osteoporotic Fracture in Rats

Dielectric properties of an antiferroelectric/ferroelectric BiFeO3/Co bilayer structure

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique

Monte Carlo study of the magnetic properties and magnetocaloric effect of an AFM/FM BiFeO3/Co bilayer

Insight into dynamic magnetic properties of YMnO3/FM bilayer in a time-dependent magnetic field

3-D Holographic Data Storage Circuit Design

Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

A new fluorescent sensor based on heterometallic Cd(II)–Ba(II)-based coordination polymer for detection of Cu2+ ion and treatment activity on psoriasis metabolic syndrome

7.7 A 2.16pJ/b 112Gb/s PAM-4 Transceiver with Time-Interleaved 2b/3b ADCs and Unbalanced Baud-Rate CDR for XSR Applications in 28nm CMOS

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption

Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High- \kappa Gated MOS Devices

A novel measurement theory for inventory of working fluid and vacuum pressure of heat pipe

Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering

An unconstrained virtual bone clamper for a knee surgical robot using visual servoing technique

Tunneling component suppression in charge pumping measurement and reliability study for high- k gated MOSFETs

Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption

Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Magnetic and thermodynamic properties of a triple-layer film superlattice: A Monte Carlo study

Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks

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