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Development and validation of a formula for objective assessment of cervical vertebral bone age

Progress in orthodontics, 2020-10, Vol.21 (1), p.38-38, Article 38

2020

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Determination of hexavalent chromium by on-line dialysis ion chromatography in a matrix of strong colourants and trivalent chromium

Journal of Chromatography A, 2003-02, Vol.988 (1), p.151-159

2003

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Analyses of carcinogenic aromatic amines released from harmful azo colorants by Streptomyces SP. SS07

Journal of Chromatography A, 2003-11, Vol.1018 (1), p.117-123

2003

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Rapid, one-pot derivatization and distillation of chlorophenols from solid samples with their on-line enrichment

Journal of Chromatography A, 2007-01, Vol.1140 (1), p.168-173

2007

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Analysis of arylamine isomers by micellar electrokinetic chromatography

Electrophoresis, 2002-02, Vol.23 (4), p.584-590

2002

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Separation of harmful chlorophenols by cyclodextrin-assisted capillary electrokinetic chromatography

Journal of separation science, 2002-11, Vol.25 (15-17), p.1143-1146

2002

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Separation of harmful chlorophenols by cyclodextrin-assisted capillary electrokinetic chromatography: Electromigration Methods

Journal of separation science, 2002, Vol.25 (15-17), p.1143-1146

2002

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Separation of Xylidine Isomers by Micellar Electrokinetic Chromatography

Journal of chromatographic science, 2001-08, Vol.39 (8), p.332-338

2001

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Carrier Transport in Graphene Field‐Effect Transistors on Gated Polar Nitride Substrates

Physica status solidi. A, Applications and materials science, 2020-08, Vol.217 (16), p.n/a

2020

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First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3433-3440

2019

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Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

Journal of applied physics, 2021-08, Vol.130 (7)

2021

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Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor

Physica status solidi. A, Applications and materials science, 2024-07

2024

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Study of TaN-Gated p-GaN E-Mode HEMT

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Scientific reports, 2017-11, Vol.7 (1), p.15749-10, Article 15749

2017

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Growth stress induced tunability of dielectric permittivity in thin films

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs

Semiconductor science and technology, 2022-03, Vol.37 (3), p.35005

2022

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Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1622-1627

2023

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Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates

Journal of applied physics, 2018-12, Vol.124 (24)

2018

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Effect of carrier material on flow characteristics of date pulp feedstock

Drying technology, 2017-01, Vol.35 (1), p.116-124

2017

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Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3711-3718

2018

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The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Estimation of background carrier concentration in fully depleted GaN films

Semiconductor science and technology, 2015-11, Vol.30 (11), p.115018

2015

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An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Spotting 2D atomic layers on aluminum nitride thin films

Nanotechnology, 2015-10, Vol.26 (42), p.425202-425202

2015

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Intrinsic limits of channel transport hysteresis in graphene-SiO 2 interface and its dependence on graphene defect density

Journal of physics. D, Applied physics, 2016-07, Vol.49 (26), p.265301

2016

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Development and validation of a formula for objective assessment of cervical vertebral bone age

Determination of hexavalent chromium by on-line dialysis ion chromatography in a matrix of strong colourants and trivalent chromium

Analyses of carcinogenic aromatic amines released from harmful azo colorants by Streptomyces SP. SS07

Rapid, one-pot derivatization and distillation of chlorophenols from solid samples with their on-line enrichment

Analysis of arylamine isomers by micellar electrokinetic chromatography

Separation of harmful chlorophenols by cyclodextrin-assisted capillary electrokinetic chromatography

Separation of harmful chlorophenols by cyclodextrin-assisted capillary electrokinetic chromatography: Electromigration Methods

Separation of Xylidine Isomers by Micellar Electrokinetic Chromatography

Carrier Transport in Graphene Field‐Effect Transistors on Gated Polar Nitride Substrates

First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs

Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor

Study of TaN-Gated p-GaN E-Mode HEMT

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Growth stress induced tunability of dielectric permittivity in thin films

Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates

Effect of carrier material on flow characteristics of date pulp feedstock

Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth

Estimation of background carrier concentration in fully depleted GaN films

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Spotting 2D atomic layers on aluminum nitride thin films

Intrinsic limits of channel transport hysteresis in graphene-SiO 2 interface and its dependence on graphene defect density

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