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Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

Applied physics letters, 2005-01, Vol.86 (3), p.033104-033104-3

2005

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Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

Journal of applied physics, 2008-11, Vol.104 (10), p.103530-103530-4

2008

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Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy

Journal of applied physics, 2008-09, Vol.104 (6), p.064309-064309-4

2008

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Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN

Journal of electronic materials, 2009-04, Vol.38 (4), p.545-550

2009

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Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

Applied physics letters, 2003-03, Vol.82 (9), p.1323-1325

2003

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Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substrates

Applied physics letters, 2004-11, Vol.85 (19), p.4355-4357

2004

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Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

Applied physics letters, 2003-08, Vol.83 (7), p.1319-1321

2003

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The influence of interface roughness on electrical transport in nanoscale metallic multilayers

Journal of applied physics, 2005-09, Vol.98 (6), p.063708-063708-5

2005

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X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration

Journal of electronic materials, 2009-04, Vol.38 (4), p.557-562

2009

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Growth mechanism of AlN by metal-organic molecular beam epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6272-6276

2004

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Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.399-405

2008

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Influence of nanocrystal growth kinetics on interface roughness in nickel–aluminum multilayers

Applied physics letters, 2003-12, Vol.83 (26), p.5437-5439

2003

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Growth of high quality InN on production style PA-MBE system

Physica status solidi. C, 2008-05, Vol.5 (6), p.1642-1644

2008

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Effect of stress and free-carrier concentration on photoluminescence in InN

Applied physics letters, 2008-03, Vol.92 (12)

2008

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X-ray diffraction study of AlN∕AlGaN short period superlattices

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Optical phonon decay in bulk aluminum nitride

Applied physics letters, 2006-07, Vol.89 (2), p.021901-021901-3

2006

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X-ray diffraction study of Al N ∕ Al Ga N short period superlattices

Journal of applied physics, 2007-12, Vol.102 (11), p.114909-114909-5

2007

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Optical Properties of AlN/AlGa(In)N Short Period Superlattices – Deep UV Light Emitting Diodes

MRS proceedings, 2003, Vol.798, Article Y1.9

2003

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Effect of stress and free-carrier concentration on photoluminescencein InN

Applied physics letters, 2008-03, Vol.92 (12), p.121913-121913-3

2008

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Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2009, Vol.38 (4), p.545-550

2009

Volltextzugriff (PDF)

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2009, Vol.38 (4), p.557-562

2009

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Characterization of high quality InN grown on production-styleplasma assisted molecular beam epitaxy system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-04, Vol.26 (3), p.399-405

2008

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Diaphragm Effects of Prestressed Concrete Girder Bridges: Review and Discussion

Practice periodical on structural design and construction, 2007-08, Vol.12 (3), p.161-167

2007

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Short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N grown on AlN substrates

Applied physics letters, 2004-11, Vol.85 (19)

2004

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HfO 2 gate dielectric with 0.5 nm equivalent oxide thickness

Applied physics letters, 2002-08, Vol.81 (6), p.1065-1067

2002

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Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy

Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN

Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substrates

Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

The influence of interface roughness on electrical transport in nanoscale metallic multilayers

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration

Growth mechanism of AlN by metal-organic molecular beam epitaxy

Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

Influence of nanocrystal growth kinetics on interface roughness in nickel–aluminum multilayers

Growth of high quality InN on production style PA-MBE system

Effect of stress and free-carrier concentration on photoluminescence in InN

X-ray diffraction study of AlN∕AlGaN short period superlattices

Optical phonon decay in bulk aluminum nitride

X-ray diffraction study of Al N ∕ Al Ga N short period superlattices

Optical Properties of AlN/AlGa(In)N Short Period Superlattices – Deep UV Light Emitting Diodes

Effect of stress and free-carrier concentration on photoluminescencein InN

Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN: Group III Nitrides, SiC, and ZnO

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration: Group III Nitrides, SiC, and ZnO

Characterization of high quality InN grown on production-styleplasma assisted molecular beam epitaxy system

Diaphragm Effects of Prestressed Concrete Girder Bridges: Review and Discussion

Short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N grown on AlN substrates

HfO 2 gate dielectric with 0.5 nm equivalent oxide thickness

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