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MaGe: a Monte Carlo framework for the Gerda and Majorana double beta decay experiments

Journal of physics. Conference series, 2006-05, Vol.39 (1), p.362-362

2006

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Search for Strange Matter by Heavy Ion Activation

Physical review letters, 1998-09, Vol.81 (12), p.2416-2419

1998

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Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n -channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Journal of applied physics, 1996-01, Vol.79 (1), p.517-525

1996

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Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors

Journal of applied physics, 1997-02, Vol.81 (3), p.1575-1580

1997

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Observation of a new type of plasma etching damage: Damage to N -channel transistors arising from inductive metal loops

Applied physics letters, 1996-03, Vol.68 (12), p.1690-1692

1996

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Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1627-1630

1996

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Hole trap generation in the gate oxide due to plasma-induced charging

IEEE electron device letters, 1996-09, Vol.17 (9), p.440-442

1996

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Temperature accelerated gate oxide degradation under plasma-induced charging

IEEE electron device letters, 1996-06, Vol.17 (6), p.288-290

1996

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Electrical properties of contact etched p -Si: A comparison between magnetically enhanced and conventional reactive ion etching

Journal of applied physics, 1994-08, Vol.76 (4), p.2270-2278

1994

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Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

IEEE electron device letters, 1996-08, Vol.17 (8), p.388-390

1996

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Impact of polysilicon dry etching on 0.5 μm NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

IEEE electron device letters, 1994-02, Vol.15 (2), p.48-50

1994

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Using SEMATECH electrical test structures in assessing plasma induced damage in poly etching

Japanese Journal of Applied Physics, 1994, Vol.33 (7B), p.4458-4460

CHAN, Y. D

1994

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Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching

IEEE electron device letters, 1997-10, Vol.18 (10), p.495-498

1997

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Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

IEEE electron device letters, 1994-10, Vol.15 (10), p.396-398

1994

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Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions

Microelectronics and reliability, 1998-01, Vol.38 (1), p.73-79

1998

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Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFETs

IEEE electron device letters, 1996-12, Vol.17 (12), p.569-571

1996

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Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Microelectronic engineering, 1995-06, Vol.28 (1), p.47-50

1995

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Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.875-879

1997

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A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures

Solid-state electronics, 1997-01, Vol.41 (1), p.41-46

1997

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Electronic states created in p-Si subjected to plasma etching : the role of inherent impurities, point defects, and hydrogen

Applied physics letters, 1993-03, Vol.62 (9), p.958-960

1993

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Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

IEEE transactions on semiconductor manufacturing, 1998-05, Vol.11 (2), p.211-216

1998

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A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress

Solid-state electronics, 1996-12, Vol.39 (12), p.1701-1707

1996

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Search for a 17 keV neutrino in the electron-capture decay of Fe 55

Physical review letters, 1993-03, Vol.70 (12), p.1759-1762

1993

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A model for threshold voltage shift under positive and negative high-field electron injection in complementary metal-oxide-semiconductor (CMOS) transistors

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.969-972

1995

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Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

MRS proceedings, 1996, Vol.428, Article 317

1996

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MaGe: a Monte Carlo framework for the Gerda and Majorana double beta decay experiments

Search for Strange Matter by Heavy Ion Activation

Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n -channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors

Observation of a new type of plasma etching damage: Damage to N -channel transistors arising from inductive metal loops

Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage

Hole trap generation in the gate oxide due to plasma-induced charging

Temperature accelerated gate oxide degradation under plasma-induced charging

Electrical properties of contact etched p -Si: A comparison between magnetically enhanced and conventional reactive ion etching

Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Impact of polysilicon dry etching on 0.5 μm NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

Using SEMATECH electrical test structures in assessing plasma induced damage in poly etching

Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching

Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFETs

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures

Electronic states created in p-Si subjected to plasma etching : the role of inherent impurities, point defects, and hydrogen

Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress

Search for a 17 keV neutrino in the electron-capture decay of Fe 55

A model for threshold voltage shift under positive and negative high-field electron injection in complementary metal-oxide-semiconductor (CMOS) transistors

Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

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