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Hybrid-orientation technology (HOT): opportunities and challenges

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.965-978

2006

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The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1384-1391

2002

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Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization

IEEE transactions on electron devices, 2001-07, Vol.48 (7), p.1394-1399

2001

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Multiple layers of CMOS integrated circuits using recrystallized silicon film

IEEE electron device letters, 2001-02, Vol.22 (2), p.77-79

2001

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Fabrication of raised S/D gate-all-around transistor and gate misalignment analysis

IEEE electron device letters, 2003-10, Vol.24 (10), p.658-660

2003

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An empirical model to determine the grain size of metal-induced lateral crystallized film

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1399-1404

2002

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Fabrication of gate-all-around transistors using metal induced lateral crystallization

IEEE electron device letters, 2001-02, Vol.22 (2), p.80-82

2001

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High performance gate-all-around devices using metal induced lateral crystallization

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125), 2000, p.112-113

2000

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Large-grain polysilicon MOSFET for 3-D integrated circuits

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125), 2000, p.22-23

2000

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Heat transfer by a free convection loop embedded in a heat-conducting solid

International journal of heat and mass transfer, 1980-08, Vol.23 (8), p.1091-1097

1980

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Three dimensional CMOS integrated circuits on large grain polysilicon films

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.161-164

2000

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Low S/D resistance FDSOI MOSFETs using polysilicon and CMP

Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553), 2001, p.89-92

2001

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3D integrated circuit using large grain polysilicon film

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.1, p.58-61 vol.1

2001

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Heat transfer by a free convection loop embedded in a heat-conducting solid

International journal of heat and mass transfer, 1980-01, Vol.23 (8), p.1091-1097

1980

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Raised S/D gate-all-around CMOS using MILC

2002 IEEE International SOI Conference, 2002, p.39-40

2002

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OC-0346: Dosimetric evaluation of TomoDirect, helical tomotherapy and field-in-field techniques in breast radiotherapy

Radiotherapy and oncology, 2013-03, Vol.106, p.S135-S136

2013

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Hybrid-orientation technology (HOT): opportunities and challenges

The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors

Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization

Multiple layers of CMOS integrated circuits using recrystallized silicon film

Fabrication of raised S/D gate-all-around transistor and gate misalignment analysis

An empirical model to determine the grain size of metal-induced lateral crystallized film

Fabrication of gate-all-around transistors using metal induced lateral crystallization

High performance gate-all-around devices using metal induced lateral crystallization

Large-grain polysilicon MOSFET for 3-D integrated circuits

Heat transfer by a free convection loop embedded in a heat-conducting solid

Three dimensional CMOS integrated circuits on large grain polysilicon films

Low S/D resistance FDSOI MOSFETs using polysilicon and CMP

3D integrated circuit using large grain polysilicon film

Heat transfer by a free convection loop embedded in a heat-conducting solid

Raised S/D gate-all-around CMOS using MILC

OC-0346: Dosimetric evaluation of TomoDirect, helical tomotherapy and field-in-field techniques in breast radiotherapy

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