UB Paderborn / Katalog / Suche / in CDI

Controlling Diffusion of Lithium in Silicon Nanostructures

Nano letters, 2010-03, Vol.10 (3), p.821-825

2010

Link zum Volltext

Verfügbarkeit prüfen

Limits on passivating defects in semiconductors: the case of Si edge dislocations

Physical review letters, 2011-07, Vol.107 (3), p.035503-035503, Article 035503

2011

Link zum Volltext

Verfügbarkeit prüfen

Role of confinement on diffusion barriers in semiconductor nanocrystals

Physical review letters, 2009-01, Vol.102 (2), p.025901-025901, Article 025901

2009

Link zum Volltext

Verfügbarkeit prüfen

Quasiatomic orbitals for ab initio tight-binding analysis

Physical review. B, Condensed matter and materials physics, 2008-12, Vol.78 (24), Article 245112

2008

Link zum Volltext

Verfügbarkeit prüfen

Ionization of a P-doped Si(111) nanofilm using two-dimensional periodic boundary conditions

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (23), Article 235445

2015

Link zum Volltext

Verfügbarkeit prüfen

An effective capacitance model for computing the electronic properties of charged defects in crystals

Computer physics communications, 2014-06, Vol.185 (6), p.1564-1569

2014

Link zum Volltext

Verfügbarkeit prüfen

Structural evolution of the Pb/Si(111) interface with metal overlayer thickness

Physical review. B, Condensed matter and materials physics, 2015-09, Vol.92 (9), Article 094103

2015

Link zum Volltext

Verfügbarkeit prüfen

Role of quantum confinement and hyperfine splitting in lithium-doped ZnO nanocrystals

Physical review. B, Condensed matter and materials physics, 2008-11, Vol.78 (19), Article 195324

2008

Link zum Volltext

Verfügbarkeit prüfen

An effective one-particle theory for formation energies in doping Si nanostructures

Applied physics letters, 2011-03, Vol.98 (13), p.133116-133116-3

2011

Link zum Volltext

Verfügbarkeit prüfen

Interaction Range of P‑Dopants in Si[110] Nanowires: Determining the Nondegenerate Limit

Nano letters, 2014-11, Vol.14 (11), p.6306-6313

2014

Link zum Volltext

Verfügbarkeit prüfen

Global structural optimization of Si magic clusters on the Si(1 1 1) 7 × 7 surface

Surface science, , Vol.598 (1), p.L339-L346

Link zum Volltext

Verfügbarkeit prüfen

The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

Solid state communications, 2015-09, Vol.217 (C), p.43-46

2015

Link zum Volltext

Verfügbarkeit prüfen

Vacancies and B doping in Si nanocrystals

Solid state communications, 2010, Vol.150 (1), p.130-132

2010

Link zum Volltext

Verfügbarkeit prüfen

Magic structures of H-passivated silicon nanowires

Nano letters, 2006-02, Vol.6 (2), p.277-281

2006

Link zum Volltext

Verfügbarkeit prüfen

Magic Structures of H-Passivated 〈110〉 Silicon Nanowires

Nano letters, 2006-02, Vol.6 (2), p.277-281

2006

Link zum Volltext

Verfügbarkeit prüfen

Large photonic band gaps in certain periodic and quasiperiodic networks in two and three dimensions

Physical review. B, Condensed matter and materials physics, 2004-09, Vol.70 (12), p.125104.1-125104.7, Article 125104

2004

Link zum Volltext

Verfügbarkeit prüfen

Hyperfine splitting of partially ionized Li donors in ZnO nanocrystals

Chemical physics letters, 2008-03, Vol.454 (4), p.337-340

2008

Link zum Volltext

Verfügbarkeit prüfen

The Structure of Ultrathin H-Passivated [112] Silicon Nanowires

Journal of physical chemistry. C, 2007-06, Vol.111 (22), p.7933-7937

2007

Link zum Volltext

Verfügbarkeit prüfen

First-principles studies of structures and stabilities of Pb/Si(111)

Physical review. B, Condensed matter, 2003-07, Vol.68 (4), Article 045410

2003

Link zum Volltext

Verfügbarkeit prüfen

Capacitance of metallic and semiconducting nanowires examined by first-principles calculations

Physical review. B, Condensed matter and materials physics, 2012-12, Vol.86 (24), Article 245414

Chan, Tzu-Liang

2012

Link zum Volltext

Verfügbarkeit prüfen

A first-principles study of Group IV dimer chains on Si(100)

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045405.1-045405.10, Article 045405

2005

Link zum Volltext

Verfügbarkeit prüfen

Algorithms for defects in nanostructures

Physica. B, Condensed matter, 2007-12, Vol.401, p.531-536

2007

Link zum Volltext

Verfügbarkeit prüfen

Quantum confinement, core level shifts, and dopant segregation in P-doped Si ⟨ 110 ⟩ nanowires

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 153413

2010

Link zum Volltext

Verfügbarkeit prüfen

Dopant binding energies in P-doped Ge[110] nanowires using real-space pseudopotentials

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (7), Article 075419

2014

Link zum Volltext

Verfügbarkeit prüfen

Charged dopants in semiconductor nanowires under partially periodic boundary conditions

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (24), Article 245440

2011

Link zum Volltext

Verfügbarkeit prüfen

Menü

Weitere Dienste

Einstellungen

Controlling Diffusion of Lithium in Silicon Nanostructures

Limits on passivating defects in semiconductors: the case of Si edge dislocations

Role of confinement on diffusion barriers in semiconductor nanocrystals

Quasiatomic orbitals for ab initio tight-binding analysis

Ionization of a P-doped Si(111) nanofilm using two-dimensional periodic boundary conditions

An effective capacitance model for computing the electronic properties of charged defects in crystals

Structural evolution of the Pb/Si(111) interface with metal overlayer thickness

Role of quantum confinement and hyperfine splitting in lithium-doped ZnO nanocrystals

An effective one-particle theory for formation energies in doping Si nanostructures

Interaction Range of P‑Dopants in Si[110] Nanowires: Determining the Nondegenerate Limit

Global structural optimization of Si magic clusters on the Si(1 1 1) 7 × 7 surface

The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

Vacancies and B doping in Si nanocrystals

Magic structures of H-passivated silicon nanowires

Magic Structures of H-Passivated 〈110〉 Silicon Nanowires

Large photonic band gaps in certain periodic and quasiperiodic networks in two and three dimensions

Hyperfine splitting of partially ionized Li donors in ZnO nanocrystals

The Structure of Ultrathin H-Passivated [112] Silicon Nanowires

First-principles studies of structures and stabilities of Pb/Si(111)

Capacitance of metallic and semiconducting nanowires examined by first-principles calculations

A first-principles study of Group IV dimer chains on Si(100)

Algorithms for defects in nanostructures

Quantum confinement, core level shifts, and dopant segregation in P-doped Si ⟨ 110 ⟩ nanowires

Dopant binding energies in P-doped Ge[110] nanowires using real-space pseudopotentials

Charged dopants in semiconductor nanowires under partially periodic boundary conditions

Suchergebnisse filtern