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Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning

ACS nano, 2013-12, Vol.7 (12), p.10572-10581

2013

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Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DF06-04DF06-6

2011

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Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

Applied physics letters, 2010-11, Vol.97 (18)

2010

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Implementing chroma key compositing with a green screen to improve the learning experience of remote students during synchronous hybrid lectures

Education and information technologies, 2024-08, Vol.29 (12), p.14687-14713

Chan, Taw Kuei

2024

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Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.79-80

2014

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Tuning the Interface Conductivity of LaAlO 3 /SrTiO 3 Using Ion Beams: Implications for Patterning

ACS nano, 2013-12, Vol.7 (12), p.10572-10581

2013

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Tuning the Interface Conductivity of LaAlO sub(3)/SrTiO sub(3) Using Ion Beams: Implications for Patterning

ACS nano, 2013-02, Vol.7 (12), p.10572-10581-10572-10581

2013

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Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals

Nanoscale, 2011-01, Vol.3 (12), p.4951-4954

2011

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Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opalsElectronic supplementary information (ESI) available: Experimental methods and Rutherford backscattering analysis of the TiO2 depth profile. See DOI: 10.1039/c1nr11248a

2011-12

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Formation of epitaxial metastable NiGe 2 thin film on Ge(100) by pulsed excimer laser anneal

Applied physics letters, 2010-11, Vol.97 (18), p.182104-182104-3

2010

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Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

Applied physics letters, 2010-11, Vol.97 (18)

2010

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Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Applied physics letters, 2007-11, Vol.91 (20), p.202105-202105-3

2007

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Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

ECS solid state letters, 2014-05, Vol.3 (8), p.P91-P93

2014

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Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.128-129

2008

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Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-07, Vol.260 (1), p.299-303

2007

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Defect-Induced Magnetism in Fullerenes and MoS2

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, 2019, p.79-93

1, 2019

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Employment of high Resolution RBS to characterize ultrathin transparent electrode in high efficiency GaN based Light Emitting Diode

Materials Challenges and Testing for Supply of Energy and Resources, p.79-93

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Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys

Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning

Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

Implementing chroma key compositing with a green screen to improve the learning experience of remote students during synchronous hybrid lectures

Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

Tuning the Interface Conductivity of LaAlO 3 /SrTiO 3 Using Ion Beams: Implications for Patterning

Tuning the Interface Conductivity of LaAlO sub(3)/SrTiO sub(3) Using Ion Beams: Implications for Patterning

Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals

Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opalsElectronic supplementary information (ESI) available: Experimental methods and Rutherford backscattering analysis of the TiO2 depth profile. See DOI: 10.1039/c1nr11248a

Formation of epitaxial metastable NiGe 2 thin film on Ge(100) by pulsed excimer laser anneal

Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs

Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films

Defect-Induced Magnetism in Fullerenes and MoS2

Employment of high Resolution RBS to characterize ultrathin transparent electrode in high efficiency GaN based Light Emitting Diode

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