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Hydrogen-mediated spin-spin interaction in ZnCoO

Physical review letters, 2005-04, Vol.94 (12), p.127204.1-127204.4, Article 127204

2005

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Hydrogen-induced ferromagnetism in ZnCoO

Applied physics letters, 2006-02, Vol.88 (6), p.062504-062504-3

2006

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Microscopic study of oxygen-vacancy defects in ferroelectric perovskites

Physical review. B, Condensed matter, 1998-06, Vol.57 (22), p.R13961-R13964

1998

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Stability of deep donor and acceptor centers in GaN, AlN, and BN

Physical review. B, Condensed matter, 1997-05, Vol.55 (19), p.12995-13001

1997

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Stabilities of single-layer and bilayer steps on Si(001) surfaces

Physical review letters, 1987-10, Vol.59 (15), p.1691-1694

CHADI, D. J

1987

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Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors

Physical review letters, 1994-01, Vol.72 (4), p.534-537

Chadi, DJ

1994

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Metastability of the isolated arsenic-antisite defect in GaAs

Physical review letters, 1988-05, Vol.60 (21), p.2187-2190

1988

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Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys

Physical review letters, 1988-08, Vol.61 (7), p.873-876

1988

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Dipolar Defect Model for Fatigue in Ferroelectric Perovskites

Physical review letters, 1999-08, Vol.83 (6), p.1231-1234

1999

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Bulk lattice instability in II-VI semiconductors and its effect on impurity compensation

Physical review letters, 1995-08, Vol.75 (6), p.1134-1137

1995

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Atomic origin of deep levels in p-type GaN: Theory

Applied physics letters, 1997-11, Vol.71 (20), p.2970-2971

Chadi, D. J.

1997

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Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Physical review letters, 2003-09, Vol.91 (12), p.125505-125505, Article 125505

2003

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Column V acceptors in ZnSe : theory and experiment

Applied physics letters, 1991-12, Vol.59 (27), p.3589-3591

CHADI, D. J

1991

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Diatomic-hydrogen-complex diffusion and self-trapping in crystalline silicon

Physical review letters, 1989-02, Vol.62 (8), p.937-940

1989

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Enumeration of periodic tetrahedral frameworks

Zeitschrift für Kristallographie. Crystalline materials, 1997-11, Vol.212 (11), p.768-791

1997

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Predictor of p -type doping in II-VI semiconductors

Physical review. B, Condensed matter, 1999-06, Vol.59 (23), p.15181-15183

Chadi, D. J.

1999

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Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

Physical review letters, 1986-02, Vol.56 (7), p.769-772

1986

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Doping in ZnSe, ZnTe, MgSe, and MgTe wide band gap semiconductors

Physical review letters, 1994-01, Vol.72 (4), p.534-537

Chadi, D J

1994

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Ab initio study of 180° domain wall energy and structure in PbTiO3

Applied physics letters, 1999-11, Vol.75 (18), p.2830-2832

1999

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Atomic and Electronic Structures of Reconstructed Si(100) Surfaces

Physical review letters, 1979-07, Vol.43 (1), p.43-47

Chadi, D. J.

1979

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Self-compensation through a large lattice relaxation in p-type ZnSe

Applied physics letters, 1989-08, Vol.55 (6), p.575-577

1989

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Theory of hydrogen passivation of shallow-level dopants in crystalline silicon

Physical review letters, 1988-04, Vol.60 (14), p.1422-1425

1988

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Metastability of two-hydrogen complexes in silicon

Applied physics letters, 2003-11, Vol.83 (18), p.3710-3712

Chadi, D. J.

2003

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Effect of interstitial hydrogen impurities on ferroelectric polarization in PbTiO3

Physical review letters, 2000-05, Vol.84 (20), p.4717-4720

2000

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Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.834-837

Chadi, D. J.

1987

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Hydrogen-mediated spin-spin interaction in ZnCoO

Hydrogen-induced ferromagnetism in ZnCoO

Microscopic study of oxygen-vacancy defects in ferroelectric perovskites

Stability of deep donor and acceptor centers in GaN, AlN, and BN

Stabilities of single-layer and bilayer steps on Si(001) surfaces

Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors

Metastability of the isolated arsenic-antisite defect in GaAs

Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys

Dipolar Defect Model for Fatigue in Ferroelectric Perovskites

Bulk lattice instability in II-VI semiconductors and its effect on impurity compensation

Atomic origin of deep levels in p-type GaN: Theory

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Column V acceptors in ZnSe : theory and experiment

Diatomic-hydrogen-complex diffusion and self-trapping in crystalline silicon

Enumeration of periodic tetrahedral frameworks

Predictor of p -type doping in II-VI semiconductors

Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

Doping in ZnSe, ZnTe, MgSe, and MgTe wide band gap semiconductors

Ab initio study of 180° domain wall energy and structure in PbTiO3

Atomic and Electronic Structures of Reconstructed Si(100) Surfaces

Self-compensation through a large lattice relaxation in p-type ZnSe

Theory of hydrogen passivation of shallow-level dopants in crystalline silicon

Metastability of two-hydrogen complexes in silicon

Effect of interstitial hydrogen impurities on ferroelectric polarization in PbTiO3

Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces

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