UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Syngas and hydrogen production via stepwise methane reforming over Cu-ferrite/YSZ

International journal of energy research, 2014-10, Vol.38 (12), p.1522-1530

2014

Volltextzugriff (PDF)

A study on improving reactivity of Cu-ferrite/ZrO2 medium for syngas and hydrogen production from two-step thermochemical methane reforming

International journal of energy research, 2010-04, Vol.34 (5), p.422-430

2010

Volltextzugriff (PDF)

Chemical hydrogen storage and release properties using redox reaction over the Cu-added Fe/Ce/Zr mixed oxide medium

Journal of Industrial and Engineering Chemistry, 2010, 16(1), , pp.81-86

2010

Volltextzugriff (PDF)

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce-ZrO2 medium

International journal of hydrogen energy, 2009-02, Vol.34 (4), p.1801-1808

2009

Volltextzugriff (PDF)

Effects of CeO2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen

International journal of hydrogen energy, 2009-02, Vol.34 (3), p.1417-1422

2009

Volltextzugriff (PDF)

Syngas and hydrogen production via stepwise methane reforming over Cu-ferrite/YSZ: Syngas and hydrogen production over Cu-ferrite/YSZ

International journal of energy research, 2014-10, Vol.38 (12), p.1522-1530

2014

Volltextzugriff (PDF)

Effects of CeO sub(2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen)

International journal of hydrogen energy, 2009-02, Vol.34 (3), p.1417-1422

2009

Volltextzugriff (PDF)

Effects of CeO 2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen

International journal of hydrogen energy, 2009, Vol.34 (3), p.1417-1422

2009

Volltextzugriff (PDF)

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce-ZrO sub(2 medium)

International journal of hydrogen energy, 2009-02, Vol.34 (4), p.1801-1808

2009

Volltextzugriff (PDF)

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce–ZrO 2 medium

International journal of hydrogen energy, 2009, Vol.34 (4), p.1801-1808

2009

Volltextzugriff (PDF)

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

IEEE electron device letters, 2014-02, Vol.35 (2), p.175-177

2014

Volltextzugriff (PDF)

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

IEEE electron device letters, 2017-08, Vol.38 (8), p.1090-1093

2017

Volltextzugriff (PDF)

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

IEEE electron device letters, 2013-02, Vol.34 (2), p.214-216

2013

Volltextzugriff (PDF)

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Materials, 2020-03, Vol.13 (7), p.1538

2020

Volltextzugriff (PDF)

Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer

IEEE electron device letters, 2014, Vol.35 (1), p.30-32

2014

Volltextzugriff (PDF)

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

Volltextzugriff (PDF)

High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

Solid-state electronics, 2016-08, Vol.122, p.32-36

2016

Volltextzugriff (PDF)

High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

Volltextzugriff (PDF)

The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode

Solid-state electronics, 2020-04, Vol.166, p.107768, Article 107768

2020

Volltextzugriff (PDF)

High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

IEEE electron device letters, 2013-03, Vol.34 (3), p.354-356

2013

Volltextzugriff (PDF)

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals (Basel), 2021-04, Vol.11 (4), p.405

2021

Volltextzugriff (PDF)

P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(6), 96, pp.485-490

2020

Volltextzugriff (PDF)

Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

IEEE electron device letters, 2018-11, Vol.39 (11), p.1636-1639

2018

Volltextzugriff (PDF)

High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.n/a

2017

Volltextzugriff (PDF)

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Coatings (Basel), 2021-03, Vol.11 (3), p.268

2021

Volltextzugriff (PDF)

1 – 25 von 71

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(67)
Mit Volltextzugriff
(67)

Publikationsform

Artikel
(70)
Tagungsberichte
(1)

Sprache

Englisch
(71)

Erscheinungsjahr

n.n

Thema

Science & Technology
(46)
Technology
(32)
Physical Sciences
(28)
Physics
(27)
Engineering
(20)
Engineering, Electrical & Electronic
(19)
Physics, Applied
(15)
Materials Science
(13)
Transistors
(12)
Materials Science, Multidisciplinary
(11)
Physics, Condensed Matter
(11)
Aluminum Gallium Nitrides
(10)
Gallium Nitride
(10)
Gallium Nitrides
(10)
Gan
(10)
Applied Sciences
(9)
Exact Sciences And Technology
(9)
Logic Gates
(9)
Normally-Off
(8)
Semiconductor Devices
(8)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Syngas and hydrogen production via stepwise methane reforming over Cu-ferrite/YSZ

A study on improving reactivity of Cu-ferrite/ZrO2 medium for syngas and hydrogen production from two-step thermochemical methane reforming

Chemical hydrogen storage and release properties using redox reaction over the Cu-added Fe/Ce/Zr mixed oxide medium

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce-ZrO2 medium

Effects of CeO2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen

Syngas and hydrogen production via stepwise methane reforming over Cu-ferrite/YSZ: Syngas and hydrogen production over Cu-ferrite/YSZ

Effects of CeO sub(2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen)

Effects of CeO 2 additive on redox characteristics of Fe-based mixed oxide mediums for storage and production of hydrogen

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce-ZrO sub(2 medium)

Reaction characteristics of two-step methane reforming over a Cu-ferrite/Ce–ZrO 2 medium

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode

High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process

Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Suchergebnisse filtern