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The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

Journal of applied physics, 2005-11, Vol.98 (9), p.093508-093508-6

2005

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Growth of AlN nanowires by metal organic chemical vapour deposition

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1476-1480

2006

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Wet chemical etching of AlN in KOH solution

Physica status solidi. C, 2006-06, Vol.3 (6), p.1767-1770

2006

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Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Applied physics letters, 2002-12, Vol.81 (27), p.5099-5101

2002

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Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence

Journal of crystal growth, 2003-04, Vol.251 (1), p.476-480

2003

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Fabrication of one-dimensional "trenched" GaN nanowires and their interconnections

Physica status solidi. A, Applications and materials science, 2007-10, Vol.204 (10), p.3387-3391

2007

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Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Journal of crystal growth, 2001-07, Vol.227, p.193-196

2001

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Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Applied physics letters, 2000-05, Vol.76 (18), p.2580-2582

2000

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Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers

Journal of crystal growth, 2003-04, Vol.251 (1), p.754-759

2003

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Field-compensated quaternary InAlGaN/GaN quantum wells

Physica Status Solidi (b), 2003-11, Vol.240 (2), p.301-304

2003

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Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.77-80

2001

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Native oxides on AlGaAs epilayer

Thin solid films, 1999-01, Vol.338 (1), p.46-48

1999

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Anodization of n and p-GaAs in ethylene glycol-water-tartaric acid mixture

Journal of applied electrochemistry, 1998-07, Vol.28 (7), p.745-749

1998

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Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.241-244

2001

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Coalescence aspects of III-nitride epitaxy

Journal of applied physics, 2007-03, Vol.101 (5), p.054906-054906-12

2007

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Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.173-179

1997

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A technology for GaAs-based optoelectronic integrated circuits

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2000, Vol.1, p.155-158 vol.1

2000

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SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors

2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748), 2004, Vol.2, p.371-374 vol.2

2004

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Modal behaviour of weak index guided stripes in low confinement laser diodes

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings, 1997, Vol.2, p.493-496 vol.2

1997

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III-V material and device aspects for the monolithic integration of GaAs devices on Si using GaAs/Si low temperature wafer bonding

2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547), 2001, Vol.1, p.239-244 vol.1

2001

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Symmetric SQW structure with low confinement factor for high power laser diodes

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, 1996, Vol.1, p.207-210 vol.1

1996

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Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002, 2002, p.125-128

2002

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Silicon linear image sensors for photometry

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 1998, Vol.1, p.67-70 vol.1

1998

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Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Journal of crystal growth, 2001, Vol.227-28, p.193-196

2001

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Field-compensated quaternary InAiGaN/GaN quantum wells

Physica status solidi. B. Basic research, 2003, Vol.240 (2), p.301-304

2003

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The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

Growth of AlN nanowires by metal organic chemical vapour deposition

Wet chemical etching of AlN in KOH solution

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence

Fabrication of one-dimensional "trenched" GaN nanowires and their interconnections

Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers

Field-compensated quaternary InAlGaN/GaN quantum wells

Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Native oxides on AlGaAs epilayer

Anodization of n and p-GaAs in ethylene glycol-water-tartaric acid mixture

Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Coalescence aspects of III-nitride epitaxy

Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation

A technology for GaAs-based optoelectronic integrated circuits

SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors

Modal behaviour of weak index guided stripes in low confinement laser diodes

III-V material and device aspects for the monolithic integration of GaAs devices on Si using GaAs/Si low temperature wafer bonding

Symmetric SQW structure with low confinement factor for high power laser diodes

Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

Silicon linear image sensors for photometry

Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Field-compensated quaternary InAiGaN/GaN quantum wells

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