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Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Applied physics letters, 2021-11, Vol.119 (21)

2021

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Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation

Applied physics letters, 2024-08, Vol.125 (6)

2024

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The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect

Applied physics letters, 2024-04, Vol.124 (16)

2024

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Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Advanced science, 2023-05, Vol.10 (14), p.e2300373-n/a

2023

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Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Advanced electronic materials, 2023-03, Vol.9 (3), p.n/a

2023

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Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4299-4303

2014

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Research progress on crystalline IGZO thin film transistor

Ye jing yu xian shi, 2023, Vol.38 (8), p.1031-1046

2023

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Selective Insertion in Copolymerization of Ethylene and Styrene Catalyzed by Half-Titanocene System Bearing Ketimide Ligand： A Theoretical Study

Chinese journal of chemistry, 2017-11, Vol.35 (11), p.1731-1738

2017

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43‐1: Invited Paper: The Application and Future Development Trend of Oxide Technology in the Meta‐Universe

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.611-614

2023

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Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4186-4193

2023

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Drain Current Drop in Oxide Semiconductor Thin-Film Transistors: The Mechanisms and a Solution

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2430-2435

2022

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Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

Ye jing yu xian shi, 2016-01, Vol.31 (6), p.558-562

2016

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P‐17: Development of Vertical Oxide Channel Thin Film Transistor Based on Hard‐Mask Etching

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1424-1426

2024

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The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Vacuum, 2023-09, Vol.215, p.112225, Article 112225

2023

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P‐18: Development of Oxide UHD Panel LCD with High Mobility for Notebook PC

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.1477-1480

2023

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P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1414-1417

2024

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85‐2: 2117PPI VR LCD with ultra‐high aperture opening ratio

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.1196-1199

2023

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Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Materials science in semiconductor processing, 2024-04, Vol.173, p.108093, Article 108093

2024

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P‐19: Performance Development of Oxide Semiconductor Photodiode with High Work Function Electrode Suitable for Mass Production

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1106-1109

2022

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P‐24: Ultra‐low power consumption notebook LCD with high on‐state current metal oxide device

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1448-1451

2024

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P‐20: High Quality Self‐Aligned Coplanar Thin‐Film Transistors with SOG Materials for High Transparent AMOLED Display

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1110-1113

2022

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Critical Assessment of the High Carrier Mobility of Bilayer In 2 O 3 /IGZO Transistors and the Underlying Mechanisms

Advanced electronic materials, 2023-03, Vol.9 (3)

2023

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P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs

SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.813-815

2019

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59‐4: Late‐News Paper: High Transmittance and High Charging Rate 8K 120Hz ADS LCD TV

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.885-888

2020

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Investigation into sand mura effects of a-IGZO TFT LCDs

Microelectronics and reliability, 2016-08, Vol.63, p.148-151

2016

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Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation

The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Research progress on crystalline IGZO thin film transistor

Selective Insertion in Copolymerization of Ethylene and Styrene Catalyzed by Half-Titanocene System Bearing Ketimide Ligand： A Theoretical Study

43‐1: Invited Paper: The Application and Future Development Trend of Oxide Technology in the Meta‐Universe

Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels

Drain Current Drop in Oxide Semiconductor Thin-Film Transistors: The Mechanisms and a Solution

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

P‐17: Development of Vertical Oxide Channel Thin Film Transistor Based on Hard‐Mask Etching

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

P‐18: Development of Oxide UHD Panel LCD with High Mobility for Notebook PC

P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production

85‐2: 2117PPI VR LCD with ultra‐high aperture opening ratio

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

P‐19: Performance Development of Oxide Semiconductor Photodiode with High Work Function Electrode Suitable for Mass Production

P‐24: Ultra‐low power consumption notebook LCD with high on‐state current metal oxide device

P‐20: High Quality Self‐Aligned Coplanar Thin‐Film Transistors with SOG Materials for High Transparent AMOLED Display

Critical Assessment of the High Carrier Mobility of Bilayer In 2 O 3 /IGZO Transistors and the Underlying Mechanisms

P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs

59‐4: Late‐News Paper: High Transmittance and High Charging Rate 8K 120Hz ADS LCD TV

Investigation into sand mura effects of a-IGZO TFT LCDs

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