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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Chaos, solitons and fractals, 2022-07, Vol.160, p.112247, Article 112247

2022

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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

Materials science in semiconductor processing, 2024-08, Vol.179, p.108480, Article 108480

2024

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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

Solid-state electronics, 2022-08, Vol.194, p.108385, Article 108385

2022

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Obtaining fast dissolving disintegrating tablets with different doses of melatonin

International journal of pharmaceutics, 2014-06, Vol.467 (1-2), p.84-89

2014

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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Solid-state electronics, 2021-09, Vol.183, p.108085, Article 108085

2021

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Variability and power enhancement of current controlled resistive switching devices

Microelectronic engineering, 2023-05, Vol.276, p.112008, Article 112008

2023

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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Materials science in semiconductor processing, 2024-01, Vol.169, p.107878, Article 107878

2024

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Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

Thin solid films, 2015-09, Vol.591, p.55-59

2015

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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Controlling the intermediate conductance states in RRAM devices for synaptic applications

Microelectronic engineering, 2019-07, Vol.215, p.110984, Article 110984

2019

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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Journal of physics. D, Applied physics, 2023-09, Vol.56 (36)

2023

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2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Solid-state electronics, 2013-01, Vol.79, p.65-74

2013

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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Dynamics of set and reset processes on resistive switching memories

Microelectronic engineering, 2019-08, Vol.216, p.111032, Article 111032

2019

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Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Experimental verification of intermediate band formation on titanium-implanted silicon

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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A physically based model for resistive memories including a detailed temperature and variability description

Microelectronic engineering, 2017-06, Vol.178, p.26-29

2017

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(Invited) A Complete Suite of Experimental Techniques for Electrical Characterization of Conventional and Incoming High-k Dielectric-Based Devices

ECS transactions, 2016, Vol.72 (2), p.153-165

2016

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Role of proteoglycans on skin ageing: a review

International journal of cosmetic science, 2020-12, Vol.42 (6), p.529-535

2020

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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

Journal of applied physics, 2008-11, Vol.104 (9), p.094107-094107-7

2008

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Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Journal of electronic materials, 2018-09, Vol.47 (9), p.5013-5018

2018

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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

Microelectronic engineering, 2017-06, Vol.178, p.30-33

2017

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Design, development and characterization of buccal bioadhesive films of Doxepin for treatment of odontalgia

Drug delivery, 2015-08, Vol.22 (6), p.869-876

2015

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Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

IEEE electron device letters, 2017-09, Vol.38 (9), p.1216-1219

2017

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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

Obtaining fast dissolving disintegrating tablets with different doses of melatonin

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Variability and power enhancement of current controlled resistive switching devices

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Controlling the intermediate conductance states in RRAM devices for synaptic applications

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

Dynamics of set and reset processes on resistive switching memories

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Experimental verification of intermediate band formation on titanium-implanted silicon

A physically based model for resistive memories including a detailed temperature and variability description

(Invited) A Complete Suite of Experimental Techniques for Electrical Characterization of Conventional and Incoming High-k Dielectric-Based Devices

Role of proteoglycans on skin ageing: a review

Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

Design, development and characterization of buccal bioadhesive films of Doxepin for treatment of odontalgia

Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

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