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Tool Wear and Life Span Variations in Cold Forming Operations and Their Implications in Microforming

Technologies (Basel), 2017, Vol.5 (1), p.3

2017

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A novel mechanism for isolated central hypothyroidism: Inactivating mutations in the thyrotropin-releasing hormone receptor gene

The journal of clinical endocrinology and metabolism, 1997-05, Vol.82 (5), p.1561-1565

1997

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Identification of human growth hormone-releasing hormone receptor splicing variants

The journal of clinical endocrinology and metabolism, 1995-08, Vol.80 (8), p.2381-2387

1995

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Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be : a comparative study

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.239-245

1991

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Techniques to minimize DX center deleterious effects in III-V device performance

Journal of applied physics, 1993-05, Vol.73 (10), p.4988-4997

1993

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Post-growth diffusion of Si in delta -doped GaAs grown by MBE

Semiconductor science and technology, 1989-12, Vol.4 (12), p.1171-1175

1989

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Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures

Semiconductor science and technology, 1992-04, Vol.7 (4), p.562-566

1992

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Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux

Journal of applied physics, 1988-07, Vol.64 (1), p.246-248

1988

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Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors

Applied physics letters, 1992-09, Vol.61 (10), p.1225-1227

1992

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Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition

Journal of applied physics, 1988-09, Vol.64 (5), p.2372-2374

1988

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Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAs

Semiconductor science and technology, 1990-07, Vol.5 (7), p.785-788

1990

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On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates

Journal of applied physics, 1988-08, Vol.64 (4), p.2076-2078

1988

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Problème d'affectation, localisation d'entrepôts

Revue française d'informatique et de recherche opérationnelle. Série verte, 1970, Vol.4 (V3), p.31-44

1970

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A large-area integrated multiprocessor system for video applications

IEEE design & test of computers, 2002-01, Vol.19 (1), p.6-17

2002

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Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)

Surface science, 1986-03, Vol.168 (1-3), p.681-687

1986

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Nouvelles anarchistes : La création littéraire dans le presse militante (1890-1946)

Vittorio Frigerio

2012

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Langages, politique, histoire. Avec Jean-Claude Zancarini

Romain Descendre, Jean-Louis Fournel (dir.)

2015

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Elimination of Twinning in Molecular Beam Epitaxy of GaAs/Si and GaAs/Insulator

ESSDERC '88: 18th European Solid State Device Research Conference, 1988-09, p.c4-697-c4-700

1988

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Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT's

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1991, p.141-150

1991

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Deep trap characterization in Si-doped In 0.52 Al 0.48 As/InP under hydrostatic pressure: a search for DX centres

Semiconductor science and technology, 1993-02, Vol.8 (2), p.206-210

1993

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Deep trap characterization in Si-doped In sub(0.52)Al sub(0.48)As/InP under hydrostatic pressure: A search for DX centres

Semiconductor science and technology, 1993-01, Vol.8 (2), p.206-210

1993

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Deep trap characterization in Si-doped In0.52Al0.48As/InP under hydrostatic pressure: a search for DX centres

Semiconductor science and technology, 1993-02, Vol.8 (2), p.206-210

1993

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Le promeneur enraciné: François Mitterrand, un cheminement politique et sensible à travers les territoires

2023

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A 16.6 cm/sup 2/ large area integrated circuit consisting of 9 video signal processors

1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon, 1996, p.113-123

1996

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Tool Wear and Life Span Variations in Cold Forming Operations and Their Implications in Microforming

A novel mechanism for isolated central hypothyroidism: Inactivating mutations in the thyrotropin-releasing hormone receptor gene

Identification of human growth hormone-releasing hormone receptor splicing variants

Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be : a comparative study

Techniques to minimize DX center deleterious effects in III-V device performance

Post-growth diffusion of Si in delta -doped GaAs grown by MBE

Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures

Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux

Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors

Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition

Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAs

On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates

Problème d'affectation, localisation d'entrepôts

A large-area integrated multiprocessor system for video applications

Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)

Nouvelles anarchistes : La création littéraire dans le presse militante (1890-1946)

Langages, politique, histoire. Avec Jean-Claude Zancarini

Elimination of Twinning in Molecular Beam Epitaxy of GaAs/Si and GaAs/Insulator

Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT's

Deep trap characterization in Si-doped In 0.52 Al 0.48 As/InP under hydrostatic pressure: a search for DX centres

Deep trap characterization in Si-doped In sub(0.52)Al sub(0.48)As/InP under hydrostatic pressure: A search for DX centres

Deep trap characterization in Si-doped In0.52Al0.48As/InP under hydrostatic pressure: a search for DX centres

Mémoires des guerres

Le promeneur enraciné: François Mitterrand, un cheminement politique et sensible à travers les territoires

A 16.6 cm/sup 2/ large area integrated circuit consisting of 9 video signal processors

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