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Spectral Output of Homogeneously Broadened Semiconductor Lasers

Photonics, 2021-08, Vol.8 (8), p.340

Cassidy, Daniel T.

2021

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Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes

Optics, 2024-03, Vol.5 (1), p.11-43

2024

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Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Optics, 2023-06, Vol.4 (2), p.272-287

2023

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Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate

Journal of crystal growth, 2014-01, Vol.386, p.183-189

2014

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High-power diode laser bars and shear strain

Optics letters, 2013-05, Vol.38 (10), p.1633

2013

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Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Applied optics (2004), 2020-06, Vol.59 (18), p.5506

2020

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Degree of polarization of photoluminescence from facets of InP as a function of strain: some experimental evidence

Applied optics (2004), 2021-06, Vol.60 (16), p.4502

2021

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Rotation of principal axes and birefringence in III-V lasers owing to bonding strain

Applied optics (2004), 2013-09, Vol.52 (25), p.6258

Cassidy, Daniel T.

2013

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Mechanical strain mapping of GaAs based VCSELs

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Quark-Novae Ia in the Hubble diagram: implications for dark energy

Research in astronomy and astrophysics, 2014-05, Vol.14 (5), p.497-519

2014

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Degree of polarization of luminescence from InP under SiN stripes: fits to FEM simulations

Optics continuum, 2023-06, Vol.2 (6), p.1505-1522

2023

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On the Evolution of Carrier Distribution and Wavelength Switching in Asymmetric Multiple Quantum-Well Lasers

IEEE journal of quantum electronics, 2007-03, Vol.43 (3), p.243-248

2007

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Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Thin solid films, 2020-07, Vol.706, p.138079, Article 138079

2020

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Mechanical stress in InP and GaAs ridges formed by reactive ion etching

Journal of applied physics, 2020-12, Vol.128 (22)

2020

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Describing n-day returns with Student’s t-distributions

Physica A, 2011-08, Vol.390 (15), p.2794-2802

Cassidy, Daniel T.

2011

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Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

Optics letters, 2018-08, Vol.43 (15), p.3505-3508

2018

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Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

Journal of electronic materials, 2018-09, Vol.47 (9), p.4987-4992

2018

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Risk-Neutral Pricing of European Call Options: A Specious Concept

Journal of mathematical finance, 2018, Vol.8 (2), p.335-348

T. Cassidy, Daniel

2018

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Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

Journal of electronic materials, 2018-09, Vol.47 (9), p.4964-4969

2018

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Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl-2/CH4 Plasma Chemistry

Journal of electronic materials, 2018-09, Vol.47 (9), p.4964-4969

2018

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Pricing European options with a log Student’s t-distribution: A Gosset formula

Physica A, 2010-12, Vol.389 (24), p.5736-5748

2010

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Extended Model of Stock Price Behaviour

Journal of mathematical finance, 2018-01, Vol.8 (1), p.1-13

2018

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Gain flattening coatings for improved spectral performance of asymmetric multiple quantum well lasers

Applied Optics, 2011-02, Vol.50 (6), p.975

2011

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Analysis of broadly tunable coupled-cavity semiconductor lasers

Applied Optics, 2011-08, Vol.50 (24), p.4834

2011

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Multichannel digital phase sensitive detection using a field programmable gate array development platform

Review of scientific instruments, 2008-07, Vol.79 (7), p.074702-074702-7

2008

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Spectral Output of Homogeneously Broadened Semiconductor Lasers

Degree of Polarization of Cathodoluminescence from a (100) GaAs Substrate with SiN Stripes

Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate

High-power diode laser bars and shear strain

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Degree of polarization of photoluminescence from facets of InP as a function of strain: some experimental evidence

Rotation of principal axes and birefringence in III-V lasers owing to bonding strain

Mechanical strain mapping of GaAs based VCSELs

Quark-Novae Ia in the Hubble diagram: implications for dark energy

Degree of polarization of luminescence from InP under SiN stripes: fits to FEM simulations

On the Evolution of Carrier Distribution and Wavelength Switching in Asymmetric Multiple Quantum-Well Lasers

Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Mechanical stress in InP and GaAs ridges formed by reactive ion etching

Describing n-day returns with Student’s t-distributions

Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

Risk-Neutral Pricing of European Call Options: A Specious Concept

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl-2/CH4 Plasma Chemistry

Pricing European options with a log Student’s t-distribution: A Gosset formula

Extended Model of Stock Price Behaviour

Gain flattening coatings for improved spectral performance of asymmetric multiple quantum well lasers

Analysis of broadly tunable coupled-cavity semiconductor lasers

Multichannel digital phase sensitive detection using a field programmable gate array development platform

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