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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Applied physics letters, 2020-06, Vol.116 (24)

2020

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Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K

Solid-state electronics, 2022-08, Vol.194, p.108337, Article 108337

2022

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Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Journal of applied physics, 2021-06, Vol.129 (21)

2021

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Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Solid-state electronics, 2024-04, Vol.214, p.108865, Article 108865

2024

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Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Solid-state electronics, 2023-10, Vol.208, p.108716, Article 108716

2023

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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4563-4567

2020

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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

IEEE journal of the Electron Devices Society, 2024-06, p.1-1

2024

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Electrical characterization of stacked SOI nanowires at low temperatures

Solid-state electronics, 2022-05, Vol.191, p.108260, Article 108260

2022

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Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

Solid-state electronics, 2023-10, Vol.208, p.108737, Article 108737

2023

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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Solid-state electronics, 2021-12, Vol.186, p.108071, Article 108071

2021

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Study of threshold voltage extraction from room temperature down to 4.2 K on 28 nm FD-SOI CMOS technology

Solid-state electronics, 2022-08, Vol.194, p.108325, Article 108325

2022

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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2598-2604

2024

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The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs

Solid-state electronics, 2019-09, Vol.159, p.83-89

2019

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Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Journal of applied physics, 2016-02, Vol.119 (8)

2016

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Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.582-590

2021

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Electrical characterization of vertically stacked p-FET SOI nanowires

Solid-state electronics, 2018-03, Vol.141, p.84-91

2018

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Ultra-Low-Voltage UTBB-SOI-Based, Pseudo-Static Storage Circuits for Cryogenic CMOS Applications

IEEE journal on exploratory solid-state computational devices and circuits, 2021-12, Vol.7 (2), p.201-208

2021

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Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.759-768

2006

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Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method

Applied physics letters, 2006-07, Vol.89 (3)

2006

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On the mobility in high- κ/metal gate MOSFETs: Evaluation of the high- κ phonon scattering impact

Solid-state electronics, 2006-04, Vol.50 (4), p.626-631

2006

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On the Zero Temperature Coefficient in FD-SOI MOSFETs

IEEE transactions on electron devices, 2023, Vol.70 (3)

2023

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

Volltextzugriff (PDF)

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Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

Electrical characterization of stacked SOI nanowires at low temperatures

Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Study of threshold voltage extraction from room temperature down to 4.2 K on 28 nm FD-SOI CMOS technology

Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

Electrical characterization of vertically stacked p-FET SOI nanowires

Ultra-Low-Voltage UTBB-SOI-Based, Pseudo-Static Storage Circuits for Cryogenic CMOS Applications

Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method

On the mobility in high- κ/metal gate MOSFETs: Evaluation of the high- κ phonon scattering impact

On the Zero Temperature Coefficient in FD-SOI MOSFETs

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

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