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Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Pulse-Train Method to Measure Transient Response of Field-Effect Transistors

IEEE electron device letters, 2019-02, Vol.40 (2), p.171-173

2019

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Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate Stacks

IEEE electron device letters, 2013-06, Vol.34 (6), p.729-731

2013

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Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks

Applied physics letters, 2015-07, Vol.107 (1)

2015

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On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling

IEEE electron device letters, 2011-07, Vol.32 (7), p.865-867

2011

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(Invited) The Past, Present and Future of High-k/Metal Gates

ECS transactions, 2013-05, Vol.53 (3), p.17-26

2013

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Interfacial layer optimization of high- k/metal gate stacks for low temperature processing

Microelectronic engineering, 2009-07, Vol.86 (7), p.1632-1634

2009

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

IEEE electron device letters, 2017-03, Vol.38 (3), p.303-305

2017

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Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Journal of applied physics, 2001-11, Vol.90 (9), p.4587-4608

2001

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Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.316-318

2022

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Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

Journal of applied physics, 2007-12, Vol.102 (11), p.114507-114507-5

2007

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High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.37.3.1-37.3.4

2017

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Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

Applied physics letters, 2015-07, Vol.107 (1)

2015

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment

IEEE electron device letters, 2017-03, Vol.38 (3), p.303-305

2017

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(Invited) The Role of Oxygen in the Development of Hf-Base High-k/Metal Gate Stacks for CMOS Technologies

ECS transactions, 2010, Vol.33 (3), p.83-94

Cartier, Eduard A.

2010

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(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content

ECS transactions, 2018, Vol.86 (7), p.51-58

2018

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BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material

ECS transactions, 2020-04, Vol.97 (3), p.81-92

2020

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Origins of Effective Work Function Roll-Off Behavior for High-[Formula Omitted] Last Replacement Metal Gate Stacks

IEEE electron device letters, 2013-06, Vol.34 (6), p.729

2013

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Reliability Challenges with Materials for Analog Computing

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-10

2019

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(Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides

ECS transactions, 2013, Vol.53 (3), p.187-192

2013

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On the Electron and Hole Tunneling in a hbox HfO 2 Gate Stack With Extreme Interfacial-Layer Scaling

IEEE electron device letters, 2011-07, Vol.32 (7), p.865-867

2011

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On the Electron and Hole Tunneling in a [Formula Omitted] Gate Stack With Extreme Interfacial-Layer Scaling

IEEE electron device letters, 2011-07, Vol.32 (7), p.865

2011

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Interfacial layer optimization of high-@@ik@/metal gate stacks for low temperature processing

Microelectronic engineering, 2009-09, Vol.86 (7-9), p.1632-1634

2009

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On the Electron and Hole Tunneling in a \hbox Gate Stack With Extreme Interfacial-Layer Scaling

IEEE electron device letters, 2011-07, Vol.32 (7), p.865-867

2011

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Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability

ECS transactions, 2013, Vol.50 (4), p.275-280

2013

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Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis

Pulse-Train Method to Measure Transient Response of Field-Effect Transistors

Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate Stacks

Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks

On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling

(Invited) The Past, Present and Future of High-k/Metal Gates

Interfacial layer optimization of high- k/metal gate stacks for low temperature processing

High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment

(Invited) The Role of Oxygen in the Development of Hf-Base High-k/Metal Gate Stacks for CMOS Technologies

(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content

BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material

Origins of Effective Work Function Roll-Off Behavior for High-[Formula Omitted] Last Replacement Metal Gate Stacks

Reliability Challenges with Materials for Analog Computing

(Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides

On the Electron and Hole Tunneling in a hbox HfO 2 Gate Stack With Extreme Interfacial-Layer Scaling

On the Electron and Hole Tunneling in a [Formula Omitted] Gate Stack With Extreme Interfacial-Layer Scaling

Interfacial layer optimization of high-@@ik@/metal gate stacks for low temperature processing

On the Electron and Hole Tunneling in a \hbox Gate Stack With Extreme Interfacial-Layer Scaling

Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability

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