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CMOS image sensor: Process impact on dark current

2014 IEEE International Reliability Physics Symposium, 2014, p.3C.1.1-3C.1.6

2014

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New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Solid-state electronics, 2011-11, Vol.65-66, p.51-56

2011

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New circuit model for investigating plasma damage in FDSOI devices

2014 IEEE International Reliability Physics Symposium, 2014, p.PI.1.1-PI.1.6

2014

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Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches

IEEE electron device letters, 2009-12, Vol.30 (12), p.1350-1352

2009

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Plasma Antenna Charging in CMOS Image Sensors

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.16.5.1-16.5.4

2019

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Challenges in CMOS-based images

Physica status solidi. C, 2014-01, Vol.11 (1), p.50-56

2014

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CMOS gate oxide defects induced by pre-gate plasma process

Microelectronic engineering, 2007-09, Vol.84 (9), p.2109-2112

2007

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Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2888-2893

2012

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Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)

Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002), 2002, p.157-162

2002

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Embedded FLASH memory thermal budget impact on core CMOS 90nm devices

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.263-266

2007

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Radiation Effects on CMOS Image Sensors With Sub-2 \mu Pinned Photodiodes

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.909-917

2012

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Radiation Effects on CMOS Image Sensors With Sub-2 mu rm m Pinned Photodiodes

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.909-917

2012

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Radiation Effects on CMOS Image Sensors With Sub-2 [Formula Omitted] Pinned Photodiodes

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.909

2012

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MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 IEEE International Electron Devices Meeting, 2014, p.4.1.1-4.1.4

2014

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'Resist / Wet Etch' Couple for Dual Gate Oxide

Solid state phenomena, 2003-01, Vol.92, p.235-238

2003

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Thermal Nitridation of Chemical Dielectrics as an Easy Approach to Ultra-thin Gate Oxide Processing

32nd European Solid-State Device Research Conference, 2002, p.163-166

2002

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Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation

30th European Solid-State Device Research Conference, 2000, p.532-535

2000

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Triple Gate Oxide by nitrogen implantation integrated in a 0.13μm CMOS flow

2002

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Silicon clean impact on 90nm CMOS devices performance

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.235-238

2003

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Charging protection and degradation by antenna environment on NMOS and PMOS transistors

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395), 1999, p.184-187

1999

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New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.106-109

2010

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Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology

2010 3rd International Nanoelectronics Conference (INEC), 2010, p.175-176

2010

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Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes

2011 12th European Conference on Radiation and Its Effects on Components and Systems, 2011, p.314-320

2011

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Low cost and high performance p-doped triple-gate access transistor for embedded DRAM memory cell

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.109-112

2009

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CMOS image sensor: Process impact on dark current

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

New circuit model for investigating plasma damage in FDSOI devices

Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches

Plasma Antenna Charging in CMOS Image Sensors

A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

Challenges in CMOS-based images

CMOS gate oxide defects induced by pre-gate plasma process

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)

Embedded FLASH memory thermal budget impact on core CMOS 90nm devices

Radiation Effects on CMOS Image Sensors With Sub-2 \mu Pinned Photodiodes

Radiation Effects on CMOS Image Sensors With Sub-2 mu rm m Pinned Photodiodes

Radiation Effects on CMOS Image Sensors With Sub-2 [Formula Omitted] Pinned Photodiodes

MOS Capacitor Deep Trench Isolation for CMOS image sensors

'Resist / Wet Etch' Couple for Dual Gate Oxide

Thermal Nitridation of Chemical Dielectrics as an Easy Approach to Ultra-thin Gate Oxide Processing

Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation

Triple Gate Oxide by nitrogen implantation integrated in a 0.13μm CMOS flow

Silicon clean impact on 90nm CMOS devices performance

Charging protection and degradation by antenna environment on NMOS and PMOS transistors

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes

Low cost and high performance p-doped triple-gate access transistor for embedded DRAM memory cell

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