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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Applied physics letters, 2017-01, Vol.110 (1)

2017

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N-type doping of Ge by As implantation and excimer laser annealing

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Monolayer doping of germanium by phosphorus-containing molecules

Nanotechnology, 2018-11, Vol.29 (46), p.465702-465702

2018

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Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Surface and interface analysis, 2014-11, Vol.46 (S1), p.393-396

2014

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Impurity and defect interactions during laser thermal annealing in Ge

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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High-level incorporation of antimony in germanium by laser annealing

Journal of applied physics, 2010-12, Vol.108 (12), p.124902-124902-6

2010

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Orientational Coherent Effects of High-Energy Particles in a LiNbO3 Crystal

Physical review letters, 2015-07, Vol.115 (1), p.015503-015503

2015

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Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

Journal of electronic materials, 2012-03, Vol.41 (3), p.457-465

2012

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Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Silicon crystal for channelling of negatively charged particles

Journal of physics. D, Applied physics, 2009-09, Vol.42 (18), p.182005-182005 (5)

2009

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Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

Journal of Raman spectroscopy, 2013-05, Vol.44 (5), p.665-669

2013

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Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Thin solid films, 2013-08, Vol.541, p.76-78

2013

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A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge

Journal of Raman spectroscopy, 2014-02, Vol.45 (2), p.197-201

2014

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Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

Applied physics letters, 2010-05, Vol.96 (20)

2010

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Room-temperature electroluminescence from Er-doped crystalline Si

Applied physics letters, 1994-04, Vol.64 (17), p.2235-2237

1994

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Role of ion mass on damage accumulation during ion implantation in Ge

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.118-121

2014

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Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

Applied physics letters, 2012-09, Vol.101 (10), p.103113

2012

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Role of self-interstitials on B diffusion in Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.8-11

2012

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Dissolution kinetics of boron-interstitial clusters in silicon

Applied physics letters, 2003-07, Vol.83 (4), p.680-682

2003

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Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

Journal of applied physics, 1999-11, Vol.86 (9), p.4748-4755

1999

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Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

Applied physics letters, 2004-03, Vol.84 (11), p.1862-1864

2004

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Fluorine segregation and incorporation during solid-phase epitaxy of Si

Applied physics letters, 2005-03, Vol.86 (12), p.121905-121905-3

2005

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Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

Applied physics letters, 2001-12, Vol.79 (25), p.4145-4147

2001

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Room temperature migration of boron in crystalline silicon

Physical review letters, 2004-07, Vol.93 (5), p.055901.1-055901.4, Article 055901

2004

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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

N-type doping of Ge by As implantation and excimer laser annealing

Monolayer doping of germanium by phosphorus-containing molecules

Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Impurity and defect interactions during laser thermal annealing in Ge

High-level incorporation of antimony in germanium by laser annealing

Orientational Coherent Effects of High-Energy Particles in a LiNbO3 Crystal

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

Silicon crystal for channelling of negatively charged particles

Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge

Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

Room-temperature electroluminescence from Er-doped crystalline Si

Role of ion mass on damage accumulation during ion implantation in Ge

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

Role of self-interstitials on B diffusion in Ge

Dissolution kinetics of boron-interstitial clusters in silicon

Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

Fluorine segregation and incorporation during solid-phase epitaxy of Si

Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

Room temperature migration of boron in crystalline silicon

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