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Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure

Applied physics letters, 1990-02, Vol.56 (7), p.659-661

1990

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Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect device

Applied physics letters, 1990-02, Vol.56 (8), p.715-717

1990

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Observation of room-temperature blue shift and bistability in a strained inGaAs-GaAs self-electro-optic effect device

Applied physics letters, 1990-02, Vol.56 (8), p.715-717

1990

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Strain tensor elements for misfit-strained [ hhk ]-oriented cubic crystals

Applied physics letters, 1992-03, Vol.60 (12), p.1441-1443

1992

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Improved Techniques for Orientation of (100) InP and GaAs Wafers

Journal of the Electrochemical Society, 1984-01, Vol.131 (6), p.1440-1441

1984

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Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

Applied physics letters, 1984-01, Vol.44 (3), p.344-345

1984

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VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1985-1985

1984

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Strain tensor elements for misfit-strained [hhk]-oriented cubic crystal

Applied physics letters, 1992, Vol.60 (12), p.1441-1443

1992

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Doping and Electrical Properties of Mn in In sub 1--x--y Ga sub x Al sub y As Grown by Molecular Beam Epitaxy

Journal of applied physics, 1983-12, Vol.54 (12), p.6974-6981

1983

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Doping and electrical properties of Mn in In1− x − y Ga x Al y As grown by molecular beam epitaxy

Journal of applied physics, 1983-12, Vol.54 (12), p.6974-6981

1983

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Doping and electrical properties of Mn in In1-x-yGaxAlyAs grown by molecular beam epitaxy

Journal of applied physics, 1983, Vol.54 (12), p.6974-6981

1983

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Compositional dependence of band-gap energy and conduction-band effective mass of In1− x − y Ga x Al y As lattice matched to InP

Applied physics letters, 1982-09, Vol.41 (5), p.476-478

1982

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Compositional dependence of band-gap energy and conduction-band effective mass of In sub(1-x-y)Ga sub(x)Al sub(y)As lattice matched to InP

Applied physics letters, 1982-01, Vol.41 (5), p.476-478

1982

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Electron transport in In(0.53)Ga(0.47) As/plasma oxide inversion layers

Applied physics letters, 1984-02, Vol.44, p.344

1984

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Silicon oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984-12, Vol.EDL-5, p.511-514

1984

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Silicon Oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET' s with a self-aligned recessed gate structure

IEEE electron device letters, 1984-12, Vol.5 (12), p.511-514

1984

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Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984, Vol.5 (12), p.511-514

1984

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Silicon oxide enhanced Schottky gate In sub(0.53)Ga sub(0.47)As FET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984-01, Vol.EDL-5 (12), p.511-514

1984

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Junction field-effect transistors using In(0.53)Ga(0.47)As material grown by molecular beam epitaxy

IEEE electron device letters, 1982-03, Vol.3 (3), p.56-58

1982

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Optically pumped ultrashort cavity In_1−xGaxAsyP_1−y lasers: picosecond operation between 083 and 159 μm

Optics letters, 1981-11, Vol.6 (11), p.534

1981

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Junction field-effect transistors using In sub(0.53)Ga sub(0.47)As material grown by molecular beam epitaxy

IEEE electron device letters, 1982-01, Vol.EDL-3 (3), p.56-58

1982

Volltextzugriff (PDF)

Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984-12, Vol.5 (12), p.511-514

1984

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Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy

IEEE electron device letters, 1982-03, Vol.3 (3), p.56-58

1982

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Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-04, Vol.1 (2), p.178-181

1983

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High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier

1984 International Electron Devices Meeting, 1984, p.356-359

1984

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Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure

Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect device

Observation of room-temperature blue shift and bistability in a strained inGaAs-GaAs self-electro-optic effect device

Strain tensor elements for misfit-strained [ hhk ]-oriented cubic crystals

Improved Techniques for Orientation of (100) InP and GaAs Wafers

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide

Strain tensor elements for misfit-strained [hhk]-oriented cubic crystal

Doping and Electrical Properties of Mn in In sub 1--x--y Ga sub x Al sub y As Grown by Molecular Beam Epitaxy

Doping and electrical properties of Mn in In1− x − y Ga x Al y As grown by molecular beam epitaxy

Doping and electrical properties of Mn in In1-x-yGaxAlyAs grown by molecular beam epitaxy

Compositional dependence of band-gap energy and conduction-band effective mass of In1− x − y Ga x Al y As lattice matched to InP

Compositional dependence of band-gap energy and conduction-band effective mass of In sub(1-x-y)Ga sub(x)Al sub(y)As lattice matched to InP

Electron transport in In(0.53)Ga(0.47) As/plasma oxide inversion layers

Silicon oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET's with a self-aligned recessed gate structure

Silicon Oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET' s with a self-aligned recessed gate structure

Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure

Silicon oxide enhanced Schottky gate In sub(0.53)Ga sub(0.47)As FET's with a self-aligned recessed gate structure

Junction field-effect transistors using In(0.53)Ga(0.47)As material grown by molecular beam epitaxy

Optically pumped ultrashort cavity In_1−xGaxAsyP_1−y lasers: picosecond operation between 083 and 159 μm

Junction field-effect transistors using In sub(0.53)Ga sub(0.47)As material grown by molecular beam epitaxy

Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy

Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy

High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier

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