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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

Applied physics letters, 2004-03, Vol.84 (13), p.2331-2333

2004

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Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

Applied physics letters, 2006-09, Vol.89 (13), p.131926-1-3

2006

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Room-temperature terahertz emission from nanometer field-effect transistors

Applied physics letters, 2006-04, Vol.88 (14), p.141906-1-3

2006

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Voltage tuneable terahertz emission from a ballistic nanometer InGaAs ∕ InAlAs transistor

Journal of applied physics, 2005-03, Vol.97 (6), p.064307-064307-7

2005

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Imaging and controlling electron transport inside a quantum ring

Nature physics, 2006-12, Vol.2 (12), p.826-830

2006

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Imaging electron wave functions inside open quantum rings

Physical review letters, 2007-09, Vol.99 (13), p.136807-136807, Article 136807

2007

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Nonlinear electrical properties of three-terminal junctions

Applied physics letters, 2006-08, Vol.89 (9), p.092124-092124-3

2006

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Terahertz detection by GaN/AlGaN transistors

Electronics letters, 2006, Vol.42 (23), p.1342-1344

2006

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Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2815-2822

2007

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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Journal of applied physics, 2005-06, Vol.97 (11), p.114313-1-5

2005

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Microscopic modeling of nonlinear transport in ballistic nanodevices

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1897-1905

2003

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A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

Frontiers in neuroscience, 2017-03, Vol.11, p.123-123

2017

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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Nanotechnology, 2003-02, Vol.14 (2), p.117-122

2003

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Monte Carlo simulator for the design optimization of low-noise HEMTs

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1950-1956

2000

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Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1535-1540

2008

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Dwell-time-limited coherence in open quantum dots

Physical review letters, 2005-04, Vol.94 (14), p.146802-146802, Article 146802

2005

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Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Semiconductor science and technology, 2007-06, Vol.22 (6), p.663-670

2007

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Wide- and narrow-band bandpass coplanar filters in the W-frequency band

IEEE transactions on microwave theory and techniques, 2003-03, Vol.51 (3), p.784-791

2003

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Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.250-253

2000

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Nonlinear effects in T-branch junctions

IEEE electron device letters, 2004-05, Vol.25 (5), p.235-237

2004

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A new method for determining the FET small-signal equivalent circuit

IEEE transactions on microwave theory and techniques, 1988-07, Vol.36 (7), p.1151-1159

1988

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A Sub-35 pW Axon-Hillock artificial neuron circuit

Solid-state electronics, 2019-03, Vol.153, p.88-92

2019

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Sign reversal and tunable rectification in a ballistic nanojunction

Applied physics letters, 2004-11, Vol.85 (19), p.4508-4510

2004

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Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

IEEE electron device letters, 2005-09, Vol.26 (9), p.601-603

2005

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Noise modeling and measurement techniques (HEMTs)

IEEE transactions on microwave theory and techniques, 1988-01, Vol.36 (1), p.1-10

Cappy, A.

1988

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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

Room-temperature terahertz emission from nanometer field-effect transistors

Voltage tuneable terahertz emission from a ballistic nanometer InGaAs ∕ InAlAs transistor

Imaging and controlling electron transport inside a quantum ring

Imaging electron wave functions inside open quantum rings

Nonlinear electrical properties of three-terminal junctions

Terahertz detection by GaN/AlGaN transistors

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Microscopic modeling of nonlinear transport in ballistic nanodevices

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Monte Carlo simulator for the design optimization of low-noise HEMTs

Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs

Dwell-time-limited coherence in open quantum dots

Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Wide- and narrow-band bandpass coplanar filters in the W-frequency band

Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

Nonlinear effects in T-branch junctions

A new method for determining the FET small-signal equivalent circuit

A Sub-35 pW Axon-Hillock artificial neuron circuit

Sign reversal and tunable rectification in a ballistic nanojunction

Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

Noise modeling and measurement techniques (HEMTs)

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