UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density

2019 Symposium on VLSI Technology, 2019, p.T44-T45

2019

Volltextzugriff (PDF)

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Applied physics letters, 2008-01, Vol.92 (1), p.013101-013101-3

2008

Volltextzugriff (PDF)

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Applied physics letters, 2008-03, Vol.92 (9), p.092102-092102-3

2008

Volltextzugriff (PDF)

Design of a Ti/TiC/DLC functionally gradient coating based on studies of structural transitions in Ti–C thin films

Thin solid films, 1997-04, Vol.298 (1), p.107-115

1997

Volltextzugriff (PDF)

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC

Journal of electronic materials, 2010-12, Vol.39 (12), p.2696-2701

2010

Volltextzugriff (PDF)

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Applied physics letters, 2009-10, Vol.95 (17)

2009

Volltextzugriff (PDF)

High-voltage (3 kV) UMOSFETs in 4H-SiC

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.972-975

2002

Volltextzugriff (PDF)

Magnetoconductance oscillations in graphene antidot arrays

Applied physics letters, 2008-09, Vol.93 (12), p.122102-122102-3

2008

Volltextzugriff (PDF)

Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles

Journal of applied physics, 2005-12, Vol.98 (11)

2005

Volltextzugriff (PDF)

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Physical review materials, 2018-10, Vol.2 (10), Article 104602

2018

Volltextzugriff (PDF)

Surface roughening in ion implanted 4H-silicon carbide

Journal of electronic materials, 1999-03, Vol.28 (3), p.214-218

1999

Volltextzugriff (PDF)

Phosphorus implantation into 4H-silicon carbide

Journal of electronic materials, 2000-02, Vol.29 (2), p.210-214

2000

Volltextzugriff (PDF)

2.6 kV 4H-SiC lateral DMOSFETs

IEEE electron device letters, 1998-04, Vol.19 (4), p.100-102

1998

Volltextzugriff (PDF)

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

Journal of electronic materials, 1998-04, Vol.27 (4), p.370-376

1998

Volltextzugriff (PDF)

Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide ( 000 1 ¯ )

Applied physics letters, 2010-02, Vol.96 (8), p.081905-081905-3

2010

Volltextzugriff (PDF)

N-channel 3C-SiC MOSFETs on silicon substrate

IEEE electron device letters, 2002-08, Vol.23 (8), p.482-484

2002

Volltextzugriff (PDF)

Graphene formation on step-free 4H-SiC(0001)

Journal of applied physics, 2011-10, Vol.110 (7), p.074307-074307-6

2011

Volltextzugriff (PDF)

Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Journal of applied physics, 2012-01, Vol.111 (1), p.013716-013716-6

2012

Volltextzugriff (PDF)

Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Journal of applied physics, 2000-06, Vol.87 (12), p.8773-8777

2000

Volltextzugriff (PDF)

Combined magnetron sputtering and pulsed laser deposition of carbides and diamond-like carbon films

Applied physics letters, 1996-07, Vol.69 (2), p.188-190

1996

Volltextzugriff (PDF)

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

New journal of physics, 2010-12, Vol.12 (12), p.125009

2010

Volltextzugriff (PDF)

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Journal of electronic materials, 2009-04, Vol.38 (4), p.574-580

2009

Volltextzugriff (PDF)

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Applied surface science, 2001-12, Vol.184 (1), p.317-322

Capano, M.A.

2001

Volltextzugriff (PDF)

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

Journal of applied physics, 1988-11, Vol.64 (10), p.4843-4852

1988

Volltextzugriff (PDF)

Characterization of amorphous carbon thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1996-03, Vol.14 (2), p.431-435

1996

Volltextzugriff (PDF)

1 – 25 von 346

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(204)
Mit Volltextzugriff
(241)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(215)
Physical Sciences
(145)
Technology
(106)
Materials Science
(100)
Materials Science, Multidisciplinary
(90)
Engineering
(85)
Engineering, Electrical & Electronic
(83)
Physics
(80)
Instruments & Instrumentation
(62)
Optics
(61)
Materials Science, Characterization & Testing
(60)
Life Sciences & Biomedicine
(55)
Physics, Applied
(46)
Animals
(35)
Humans
(35)
Social Sciences
(32)
Male
(22)
Exact Sciences And Technology
(21)
Rats
(21)
Biological And Medical Sciences
(20)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Design of a Ti/TiC/DLC functionally gradient coating based on studies of structural transitions in Ti–C thin films

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

High-voltage (3 kV) UMOSFETs in 4H-SiC

Magnetoconductance oscillations in graphene antidot arrays

Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Surface roughening in ion implanted 4H-silicon carbide

Phosphorus implantation into 4H-silicon carbide

2.6 kV 4H-SiC lateral DMOSFETs

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide ( 000 1 ¯ )

N-channel 3C-SiC MOSFETs on silicon substrate

Graphene formation on step-free 4H-SiC(0001)

Quantum-Hall plateau−plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Combined magnetron sputtering and pulsed laser deposition of carbides and diamond-like carbon films

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

Characterization of amorphous carbon thin films

Suchergebnisse filtern