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Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

ACS applied materials & interfaces, 2017-03, Vol.9 (11), p.10296-10307

2017

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Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination

Journal of physical chemistry. C, 2019-04, Vol.123 (16), p.10346-10355

2019

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SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching

Chemistry of materials, 2019-05, Vol.31 (10), p.3624-3635

2019

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Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

Journal of physical chemistry. C, 2021-11, Vol.125 (46), p.25589-25599

2021

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Thermal Atomic Layer Etching of SiO 2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

ACS applied materials & interfaces, 2017-03, Vol.9 (11), p.10296-10307

2017

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Thermal Atomic Layer Etching of Al2O3 Using Sequential HF and BCl3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms

Chemistry of materials, 2022-07, Vol.34 (14), p.6440-6449

2022

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Thermal Atomic Layer Etching of Al 2 O 3 Using Sequential HF and BCl 3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms

Chemistry of materials, 2022-07, Vol.34 (14), p.6440-6449

2022

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Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF 2 for Fluorination and BCl 3 for Ligand Exchange

Journal of physical chemistry. C, 2022-04, Vol.126 (16), p.6990-6999

2022

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Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-03, Vol.39 (2)

2021

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Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO 2

Journal of physical chemistry. C, 2021-11, Vol.125 (46), p.25589-25599

2021

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Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-03, Vol.40 (2)

2022

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Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-01, Vol.41 (1)

2023

Volltextzugriff (PDF)

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al 2 O 3 by trimethylaluminum

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-03, Vol.39 (2)

2021

Volltextzugriff (PDF)

SF 4 as the Fluorination Reactant for Al 2 O 3 and VO 2 Thermal Atomic Layer Etching

Chemistry of materials, 2019-05, Vol.31 (10), p.3624-3635

2019

Volltextzugriff (PDF)

Effect of HF Pressure on Thermal Al 2 O 3 Atomic Layer Etch Rates and Al 2 O 3 Fluorination

Journal of physical chemistry. C, 2019-04, Vol.123 (16), p.10346-10355

2019

Volltextzugriff (PDF)

Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF2 for Fluorination and BCl3 for Ligand Exchange

Journal of physical chemistry. C, 2022-04, Vol.126 (16), p.6990-6999

2022

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Limited progress in nutrient pollution in the U.S. caused by spatially persistent nutrient sources

PloS one, 2021-11, Vol.16 (11), p.e0258952

2021

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Prospects of core–edge integrated no-ELM and small-ELM scenarios for future fusion devices

Nuclear materials and energy, 2023-03, Vol.34 (C), p.101308, Article 101308

2023

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Genome variation and population structure among 1142 mosquitoes of the African malaria vector species Anopheles gambiae and Anopheles coluzzii

Genome research, 2020-10, Vol.30 (10), p.1533

Anopheles gambiae 1000 Genomes Consortium

2020

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Conduction System Pacing Versus Conventional Cardiac Resynchronization Therapy in Congenital Heart Disease

JACC. Clinical electrophysiology, 2023-03, Vol.9 (3), p.385-393

2023

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Resistance to pirimiphos-methyl in West African Anopheles is spreading via duplication and introgression of the Ace1 locus

PLoS genetics, 2021-01, Vol.17 (1), p.e1009253

2021

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Prospects of core–edge integrated no-ELM and small-ELM scenarios for future fusion devices

Nuclear materials and energy, 2023-03, Vol.34 (C)

2023

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Plasmodium diversity in non-malaria individuals from the Bioko Island in Equatorial Guinea (West Central-Africa)

International journal of health geographics, 2006-06, Vol.5 (1), p.27-27

2006

Volltextzugriff (PDF)

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Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination

SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

Thermal Atomic Layer Etching of SiO 2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

Thermal Atomic Layer Etching of Al2O3 Using Sequential HF and BCl3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms

Thermal Atomic Layer Etching of Al 2 O 3 Using Sequential HF and BCl 3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms

Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF 2 for Fluorination and BCl 3 for Ligand Exchange

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO 2

Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory

Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al 2 O 3 by trimethylaluminum

SF 4 as the Fluorination Reactant for Al 2 O 3 and VO 2 Thermal Atomic Layer Etching

Effect of HF Pressure on Thermal Al 2 O 3 Atomic Layer Etch Rates and Al 2 O 3 Fluorination

Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF2 for Fluorination and BCl3 for Ligand Exchange

Limited progress in nutrient pollution in the U.S. caused by spatially persistent nutrient sources

Prospects of core–edge integrated no-ELM and small-ELM scenarios for future fusion devices

Genome variation and population structure among 1142 mosquitoes of the African malaria vector species Anopheles gambiae and Anopheles coluzzii

Conduction System Pacing Versus Conventional Cardiac Resynchronization Therapy in Congenital Heart Disease

Resistance to pirimiphos-methyl in West African Anopheles is spreading via duplication and introgression of the Ace1 locus

Prospects of core–edge integrated no-ELM and small-ELM scenarios for future fusion devices

Plasmodium diversity in non-malaria individuals from the Bioko Island in Equatorial Guinea (West Central-Africa)

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