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(0?0?1) Co^sub 2^Z filled random Co^sub 2^Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

Materials letters, 2018-02, Vol.212, p.275

2018

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(0 0 1) Co2Z filled random Co2Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

Materials letters, 2018-02, Vol.212, p.275-278

2018

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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Materials science--Poland, 2016-09, Vol.34 (3), p.555-563

2016

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A 0.001-mm$$^{2}$$ 112.32-$$\upmu $$W All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

Circuits, systems, and signal processing, 2022-03, Vol.41 (3), p.1563-1576

2022

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A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

Circuits, systems, and signal processing, 2022-03, Vol.41 (3), p.1563-1576

2022

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A 0.0014 mm 2 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the -60 to +40 °C Measurement Range

Sensors (Basel, Switzerland), 2019-04, Vol.19 (8)

2019

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A 0.0014 mm2 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range

Sensors (Basel, Switzerland), 2019-04, Vol.19 (8), p.1777

2019

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A 0.003 mm ^ 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

IEEE journal of solid-state circuits, 2015-06, Vol.50 (6), p.1382-1398

2015

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A 0.003-mm 2 440fs RMS -Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2021-06, Vol.68 (6), p.2307-2316

2021

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A 0.003-mm2 440fsRMS-Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2021-06, Vol.68 (6), p.2307-2316

2021

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A 0.003-mm2 440fsRMS-Jitter and -64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

2019 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2019, p.283-284

2019

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A 0.004-mm 2 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

IEEE journal of solid-state circuits, 2023-11, Vol.58 (11), p.3179-3193

2023

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A 0.004-mm ^ 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

IEEE journal of solid-state circuits, 2023-11, p.1-15

2023

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A 0.004-mm2 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

IEEE journal of solid-state circuits, 2023-11, Vol.58 (11), p.3179

2023

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A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-11, Vol.11 (21)

2022

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A 0.00426 mm2 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-10, Vol.11 (21), p.3477

2022

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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.004mm2 single-channel 6-bit 1.25GS/s SAR ADC in 40nm CMOS

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.277-280

2013

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0.005 % hypochlorite reduces serine protease in cultured human keratinocytes: Evidences supporting bleach bath improves atopic dermatitis

Journal of dermatological science, 2022-09, Vol.107 (3), p.169-172

2022

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0.005% Preservative-Free Latanoprost Induces Dry Eye-Like Ocular Surface Damage via Promotion of Inflammation in Mice

Investigative ophthalmology & visual science, 2018-07, Vol.59 (8), p.3375-3384

2018

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A 0.0055mm2 480µW Fully Synthesizable PLL Using Stochastic TDC in 28nm FDSOI

IEICE transactions on electronics, 2016, Vol.E99.C (6), p.632-640

2016

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A 0.0056-mm 2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.88-98

2019

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A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.88-98

2019

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A 0.0056mm2 all-digital MDLL using edge re-extraction, dual-ring VCOs and a 0.3mW block-sharing frequency tracking loop achieving 292fsrms Jitter and −249dB FOM

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.118-120

2018

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(0?0?1) Co^sub 2^Z filled random Co^sub 2^Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

(0 0 1) Co2Z filled random Co2Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

A 0.001-mm$$^{2}$$ 112.32-$$\upmu $$W All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

A 0.0014 mm 2 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the -60 to +40 °C Measurement Range

A 0.0014 mm2 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range

A 0.003 mm ^ 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

A 0.003-mm 2 440fs RMS -Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.003-mm2 440fsRMS-Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.003-mm2 440fsRMS-Jitter and -64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.004-mm 2 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

A 0.004-mm ^ 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

A 0.004-mm2 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS

A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.00426 mm2 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

A 0.004mm2 single-channel 6-bit 1.25GS/s SAR ADC in 40nm CMOS

0.005 % hypochlorite reduces serine protease in cultured human keratinocytes: Evidences supporting bleach bath improves atopic dermatitis

0.005% Preservative-Free Latanoprost Induces Dry Eye-Like Ocular Surface Damage via Promotion of Inflammation in Mice

A 0.0055mm2 480µW Fully Synthesizable PLL Using Stochastic TDC in 28nm FDSOI

A 0.0056-mm 2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

A 0.0056mm2 all-digital MDLL using edge re-extraction, dual-ring VCOs and a 0.3mW block-sharing frequency tracking loop achieving 292fsrms Jitter and −249dB FOM

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