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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

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A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503

1998

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A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

Physica status solidi. C, 2009-06, Vol.6 (S2)

2009

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A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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0.13-[micro]m 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

IEEE journal of solid-state circuits, 2002-07, Vol.37 (7), p.932

2002

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0.13-mu m 32-Mb/64-Mb embedded DRAM core with high efficientredundancy and enhanced testability

IEEE journal of solid-state circuits, 2002-07, Vol.37 (7), p.932-940

2002

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0.13 μm CMOS Cartesian loop transmitter IC with fast calibration and switching scheme from opened to closed loop

ESSCIRC 2008 - 34th European Solid-State Circuits Conference, 2008, p.342-345

2008

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0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.757-763

2004

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0.13-[mu]m RF CMOS and varactors performance optimization by multiple gate layouts

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2181

2004

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0.13-μm RF CMOS and varactors performance optimization by multiple gate layouts

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2181-2185

2004

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0.13- $muhbox m$ RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2181-2185

2004

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0.13-mum low-/kappa/-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.757-763

2004

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0.13-mum RF CMOS and varactors performance optimization by multiple gate layouts

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2181-2185

2004

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0.13-/spl mu/m 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

IEEE journal of solid-state circuits, 2002-07, Vol.37 (7), p.932-940

2002

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0.13-/spl mu/m RF CMOS and varactors performance optimization by multiple gate layouts

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2181-2185

2004

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0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

IEEE journal of solid-state circuits, 2002-07, Vol.37 (7), p.932-940

2002

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0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

2003 33rd European Microwave Conference, 2003, p.683-686

2003

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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

0.13-[micro]m 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

0.13-mu m 32-Mb/64-Mb embedded DRAM core with high efficientredundancy and enhanced testability

0.13 μm CMOS Cartesian loop transmitter IC with fast calibration and switching scheme from opened to closed loop

0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel

0.13-[mu]m RF CMOS and varactors performance optimization by multiple gate layouts

0.13-μm RF CMOS and varactors performance optimization by multiple gate layouts

0.13- $muhbox m$ RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts

0.13-mum low-/kappa/-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel

0.13-mum RF CMOS and varactors performance optimization by multiple gate layouts

0.13-/spl mu/m 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

0.13-/spl mu/m RF CMOS and varactors performance optimization by multiple gate layouts

0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

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