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Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Applied physics letters, 2019-09, Vol.115 (10)

2019

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A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235310

2012

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Silicon carbide detectors for dosimetry and monitoring of ultra-high dose rate beams

Journal of instrumentation, 2024-03, Vol.19 (3), p.C03064

2024

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CO2 flux measurements in volcanic areas using the dynamic concentration method: Influence of soil permeability

Journal of Geophysical Research - Solid Earth, 2006-05, Vol.111 (B5), p.B05202-n/a

2006

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Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES

Applied physics letters, 2017-03, Vol.110 (13)

2017

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Hazardous Changes in Soil CO2 Emissions at Vulcano, Italy, in 2021

Journal of geophysical research. Solid earth, 2022-11, Vol.127 (11), p.n/a

2022

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Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-08, Vol.198, p.14-19

2015

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Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application

Journal of microelectromechanical systems, 2011-06, Vol.20 (3), p.745-752

2011

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Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices

Applied physics letters, 2012-03, Vol.100 (13), p.134104-134104-5

2012

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High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Thin solid films, 2010, Vol.518 (6), p.S165-S169

2010

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Evaluation of carbon isotope fractionation of soil CO2 under an advective–diffusive regimen: A tool for computing the isotopic composition of unfractionated deep source

Geochimica et cosmochimica acta, 2007-06, Vol.71 (12), p.3016-3027

2007

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Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy

Thin solid films, 2012-11, Vol.522, p.20-22

2012

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Caged Cyclopropenes with Improved Tetrazine Ligation Kinetics

Organic letters, 2019-05, Vol.21 (10), p.3721-3725

2019

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Monte Carlo study of the early growth stages of 3C-SiC on misoriented <11-20> and <1-100> 6H-SiC substrates: role of step-island interaction

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1606-1610

2014

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Modular Enzyme‐ and Light‐Based Activation of Cyclopropene–Tetrazine Ligation

Chembiochem : a European journal of chemical biology, 2019-09, Vol.20 (17), p.2222-2226

2019

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Multiple representations of body movements in mesial area 6 and the adjacent cingulate cortex: An intracortical microstimulation study in the macaque monkey

Journal of comparative neurology (1911), 1991-09, Vol.311 (4), p.463-482

1991

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Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

Thin solid films, 2010, Vol.518 (6), p.S159-S161

2010

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Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

Applied physics letters, 2009-09, Vol.95 (11)

2009

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A PET Prototype for "In-Beam" Monitoring of Proton Therapy

IEEE transactions on nuclear science, 2009-02, Vol.56 (1), p.51-56

2009

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The structure of a hydrothermal system from an integrated geochemical, geophysical, and geological approach: The Ischia Island case study

Geochemistry, geophysics, geosystems : G3, 2011-07, Vol.12 (7), p.np-n/a

2011

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Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of crystal growth, 2008-03, Vol.310 (5), p.971-975

2008

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Characterization of an intraoperative gamma system

Physica medica, 2016-02, Vol.32, p.100-100

2016

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Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si

Applied physics letters, 2009-03, Vol.94 (10)

2009

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Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping

Materials science forum, 2010-04, Vol.645-648, p.555-558

2010

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Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Silicon carbide detectors for dosimetry and monitoring of ultra-high dose rate beams

CO2 flux measurements in volcanic areas using the dynamic concentration method: Influence of soil permeability

Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES

Hazardous Changes in Soil CO2 Emissions at Vulcano, Italy, in 2021

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application

Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices

High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Evaluation of carbon isotope fractionation of soil CO2 under an advective–diffusive regimen: A tool for computing the isotopic composition of unfractionated deep source

Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy

Caged Cyclopropenes with Improved Tetrazine Ligation Kinetics

Monte Carlo study of the early growth stages of 3C-SiC on misoriented <11-20> and <1-100> 6H-SiC substrates: role of step-island interaction

Modular Enzyme‐ and Light‐Based Activation of Cyclopropene–Tetrazine Ligation

Multiple representations of body movements in mesial area 6 and the adjacent cingulate cortex: An intracortical microstimulation study in the macaque monkey

Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

A PET Prototype for "In-Beam" Monitoring of Proton Therapy

The structure of a hydrothermal system from an integrated geochemical, geophysical, and geological approach: The Ischia Island case study

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Characterization of an intraoperative gamma system

Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping

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