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Towards forming-free resistive switching in oxygen engineered HfO2−x

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Nanotechnology, 2013-03, Vol.24 (8), p.085706-085706

2013

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Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

Journal of applied physics, 2011-06, Vol.109 (12), p.124507-124507-6

2011

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Sylvester's question and the random acceleration process

Journal of statistical mechanics, 2008-10, Vol.2008 (10), p.P10010

2008

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Properties of innovative resistive memories studied by X-ray and UV photoemission

Surface and interface analysis, 2010-06, Vol.42 (6-7), p.783-786

2010

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Resistance switching in HfO2-based OxRRAM devices

Microelectronic engineering, 2011-07, Vol.88 (7), p.1140-1142

2011

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Thickness independent reduced forming voltage in oxygen engineered HfO 2 based resistive switching memories

Applied physics letters, 2014-08, Vol.105 (7), p.73505

2014

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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Scientific reports, 2016-05, Vol.6 (1), p.25757-25757, Article 25757

2016

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P1.13-14 The Molecular Landscape of Lung Adenocarcinomas with Activating EGFR Gene Mutations Determined by Targeted-Sequencing

Journal of thoracic oncology, 2018-10, Vol.13 (10), p.S587-S587

2018

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Asymptotics of Visibility in the Hyperbolic Plane

Advances in applied probability, 2013-06, Vol.45 (2), p.332-350

2013

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Random Line Tessellations of the Plane: Statistical Properties of Many-Sided Cells

Journal of statistical physics, 2008-08, Vol.132 (4), p.627-647

2008

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An explicit expression for the distribution of the number of sides of the typical Poisson-Voronoi cell

Advances in applied probability, 2003-12, Vol.35 (4), p.863-870

Calka, Pierre

2003

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The distributions of the smallest disks containing the Poisson-Voronoi typical cell and the Crofton cell in the plane

Advances in applied probability, 2002-12, Vol.34 (4), p.702-717

Calka, Pierre

2002

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Precise formulae for the distributions of the principal geometric characteristics of the typical cells of a two-dimensional Poisson-Voronoi tessellation and a Poisson line process

Advances in applied probability, 2003-09, Vol.35 (3), p.551-562

Calka, Pierre

2003

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P3.13-08 Assessment of EGFR Gene Mutations In cf-DNA in Monitoring of Response to EGFR TKIs in Patients with Lung Adenocarcinoma

Journal of thoracic oncology, 2018-10, Vol.13 (10), p.S979-S979

2018

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Assessment of EGFR gene mutations in circulating free DNA in monitoring of response to EGFR tyrosine kinase inhibitors in patients with lung adenocarcinoma

Archives of medical science, 2020, Vol.16 (6), p.1496-1500

2020

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Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Limit Theorems for the Typical Poisson-Voronoi Cell and the Crofton Cell with a Large Inradius

The Annals of probability, 2005-07, Vol.33 (4), p.1625-1642

2005

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Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Chemical and structural properties of conducting nanofilaments in TiN/HfO sub(2)-based resistive switching structures

Nanotechnology, 2013-03, Vol.24 (8), p.085706-1-9

2013

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Chemical and structural properties of conducting nanofilaments in TiN/HfO 2 -based resistive switching structures

Nanotechnology, 2013-03, Vol.24 (8), p.85706

2013

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Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs

Solid-state electronics, 2011-04, Vol.58 (1), p.62-67

2011

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Resistance switching in HfO sub(2-based OxRRAM devices)

Microelectronic engineering, 2011-07, Vol.88 (7), p.1140-1142

2011

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Refined convergence for the Boolean model

Advances in applied probability, 2009-12, Vol.41 (4), p.940-957

2009

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Towards forming-free resistive switching in oxygen engineered HfO2−x

Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

Sylvester's question and the random acceleration process

Properties of innovative resistive memories studied by X-ray and UV photoemission

Resistance switching in HfO2-based OxRRAM devices

Thickness independent reduced forming voltage in oxygen engineered HfO 2 based resistive switching memories

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

P1.13-14 The Molecular Landscape of Lung Adenocarcinomas with Activating EGFR Gene Mutations Determined by Targeted-Sequencing

Asymptotics of Visibility in the Hyperbolic Plane

Random Line Tessellations of the Plane: Statistical Properties of Many-Sided Cells

An explicit expression for the distribution of the number of sides of the typical Poisson-Voronoi cell

The distributions of the smallest disks containing the Poisson-Voronoi typical cell and the Crofton cell in the plane

Precise formulae for the distributions of the principal geometric characteristics of the typical cells of a two-dimensional Poisson-Voronoi tessellation and a Poisson line process

P3.13-08 Assessment of EGFR Gene Mutations In cf-DNA in Monitoring of Response to EGFR TKIs in Patients with Lung Adenocarcinoma

Assessment of EGFR gene mutations in circulating free DNA in monitoring of response to EGFR tyrosine kinase inhibitors in patients with lung adenocarcinoma

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Limit Theorems for the Typical Poisson-Voronoi Cell and the Crofton Cell with a Large Inradius

Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

Chemical and structural properties of conducting nanofilaments in TiN/HfO sub(2)-based resistive switching structures

Chemical and structural properties of conducting nanofilaments in TiN/HfO 2 -based resistive switching structures

Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs

Resistance switching in HfO sub(2-based OxRRAM devices)

Refined convergence for the Boolean model

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